Deep impurity-center ionization by far-infrared radiation

SD Ganichev, W Prettl, IN Yassievich - Physics of the Solid State, 1997 - Springer
An analysis is made of the ionization of deep impurity centers by high-intensity far-infrared
and submillimeter-wavelength radiation, with photon energies tens of times lower than the …

A review on terahertz photogalvanic spectroscopy of Bi2Te3-and Sb2Te3-based three dimensional topological insulators

H Plank, SD Ganichev - Solid-State Electronics, 2018 - Elsevier
The paper overviews experimental and theoretical studies of photogalvanic effects induced
in BiSbTe-based three dimensional topological insulators by polarized terahertz radiation …

Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors

SD Ganichev, E Ziemann, W Prettl, IN Yassievich… - Physical Review B, 2000 - APS
The enhancement of the emission rate of charge carriers from deep-level defects in electric
field is routinely used to determine the charge state of the defects. However, only a limited …

Photon drag effect in three-dimensional topological insulators

H Plank, LE Golub, S Bauer, VV Bel'Kov, T Herrmann… - Physical Review B, 2016 - APS
We report on the observation of a terahertz radiation-induced photon drag effect in
epitaxially grown n-and p-type (Bi 1− x Sb x) 2 Te 3 three-dimensional topological insulators …

Photocurrents in bulk tellurium

MD Moldavskaya, LE Golub, SN Danilov, VV Bel'kov… - Physical Review B, 2023 - APS
We report a comprehensive study of polarized infrared/terahertz photocurrents in bulk
tellurium crystals. We observe different photocurrent contributions and show that, depending …

Nonlinear intensity dependence of ratchet currents induced by terahertz laser radiation in bilayer graphene with asymmetric periodic grating gates

E Mönch, S Hubmann, I Yahniuk, S Schweiss… - Journal of Applied …, 2023 - pubs.aip.org
We report on the observation of a nonlinear intensity dependence of the terahertz radiation-
induced ratchet effects in bilayer graphene with asymmetric dual-grating gate lateral lattices …

Infrared/terahertz spectra of the photogalvanic effect in (Bi, Sb) Te based three-dimensional topological insulators

H Plank, J Pernul, S Gebert, SN Danilov… - Physical Review …, 2018 - APS
We report on the systematic study of infrared/terahertz spectra of photocurrents in (Bi, Sb) Te
based three-dimensional topological insulators. We demonstrate that in a wide range of …

Superlinear Photogalvanic Effects in ((: Probing Three-Dimensional Topological Insulator Surface States at Room Temperature

SN Danilov, LE Golub, T Mayer, A Beer, S Binder… - Physical Review …, 2021 - APS
We report on the observation of a complex nonlinear intensity dependence of the circular
and linear photogalvanic currents induced by infrared radiation in compensated (Bi 0.3 Sb …

Rectification ratio and direction controlled by temperature in copper phthalocyanine ensemble molecular diodes

CS Lopes, L Merces, RF de Oliveira, DHS de Camargo… - Nanoscale, 2020 - pubs.rsc.org
Organic diodes and molecular rectifiers are fundamental electronic devices that share one
common feature: current rectification ability. Since both present distinct spatial dimensions …

Magnetophotogalvanic effects driven by terahertz radiation in CdHgTe crystals with Kane fermions

MD Moldavskaya, LE Golub, VV Bel'kov, SN Danilov… - Physical Review B, 2024 - APS
We report on the observation and comprehensive study of the terahertz radiation induced
magnetophotogalvanic effect (MPGE) in bulk CdHgTe crystals hosting Kane fermions. The …