Novel valleytronic and piezoelectric properties coexisting in Janus MoAZ 3 H (A= Si, or Ge; Z= N, P, or As) monolayers

X Cai, G Chen, R Li, Z Pan, Y Jia - Journal of Materials Chemistry C, 2024 - pubs.rsc.org
In this paper, for the newly proposed two-dimensional (2D) Janus MoAZ3H (A= Si, or Ge; Z=
N, P, or As) monolayer (ML) materials, we theoretically explore the valleytronic and …

Strain-driven valley-dependent Berry phase effects and topological transitions in Janus SVGeN2 monolayer

J Zhao, Y Qi, C Yao, H Zeng - Applied Physics Letters, 2024 - pubs.aip.org
The manipulation of valley-dependent properties in two-dimensional (2D) materials is
intriguing for developing valleytronics. Using first-principles calculations, we explore valley …

Tunable valley-spin splitting in a Janus monolayer and giant valley polarization via vanadium doping

J Zhao, Y Qi, C Yao, H Zeng - Physical Review B, 2024 - APS
Exploring spin-valley coupling in two-dimensional (2D) materials with strong spin-orbit
coupling (SOC) is of great significance for fundamental physics and practical applications …

Nonrelativistic spin splittings and altermagnetism in twisted bilayers of centrosymmetric antiferromagnets

S Sheoran, S Bhattacharya - Physical Review Materials, 2024 - APS
Magnetism-driven nonrelativistic spin splittings (NRSS) are promising for highly efficient
spintronics applications. Although 2D centrosymmetric (in four-dimensional spacetime) …

Probing the uniaxial strain-dependent valley drift and Berry curvature in monolayer

S Sheoran, M Jain, R Moulik, S Bhattacharya - Physical Review Materials, 2023 - APS
We use ab initio calculations and theoretical analysis to investigate the influence of uniaxial
tensile strain on valley drifts and Berry curvatures in the monolayer MoSi 2 N 4, a …

Spin Hall effect modulated by an electric field in asymmetric two-dimensional MoSiAs 2 Se

J Xing, C Wu, S Li, Y Chen, L Zhang, Y Xie… - Physical Chemistry …, 2024 - pubs.rsc.org
Spin current generation from charge current in nonmagnetic materials promises an energy-
efficient scheme for manipulating magnetization in spintronic devices. In some asymmetric …

Exploring the valleytronic, optical, and piezoelectric properties of Janus MoBXY 2 (X= N, P; Y= S, Se, Te) monolayers for multifunctional applications

L Xie, L Wang, YD Ma, H Lu, Y Yang - Physical Chemistry Chemical …, 2024 - pubs.rsc.org
Inspired by recent studies on MoS2 and MoSi2N4, we propose and investigate Janus
MoBXY2 (X= N, P; Y= S, Se, Te) monolayers, which exhibit robust dynamic and thermal …

Quantum spin Hall insulating phase in two-dimensional MA2Z4 materials: SrTl2Te4 and BaTl2Te4

J D'Souza, IMR Verzola, RAB Villaos, ZQ Huang… - Applied Physics …, 2024 - pubs.aip.org
With the recent synthesis of two-dimensional (2D) MoSi 2 N 4, the 2D material family with the
general formula MA 2 Z 4 has become increasingly popular. However, their topological …

Characterization of ferromagnetic semiconductors and valley polarization in janus VBXS2 (X= N, P) monolayers

M Long, F Miao, M Xu, S Feng, Y Yang - Physica Scripta, 2024 - iopscience.iop.org
The manipulation of the valley degree of freedom has attracted increasing attention in both
fundamental scientific research and emerging applications. Here, we employ first-principles …

Nonrelativistic spin splittings in twisted bilayers of centrosymmetric antiferromagnets: A case study of MnPSe3 and MnSe

S Sheoran, S Bhattacharya - arXiv preprint arXiv:2310.19395, 2023 - arxiv.org
Antiferromagnetism-induced spin splittings--even without atomic spin-orbit coupling--are
promising for highly efficient spintronics applications. Although two-dimensional (2D) …