The rapid development of charge transporting and light‐emitting organic materials in the last
decades has advanced device performance, highlighting the high potential of light‐emitting …

We report on light emission from a polymeric transistor that utilizes interdigitated source and
drain electrodes with channel length of 5 m in a bottom gate configuration based on a …

A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure
having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled …

The authors report the analytical small-signal modeling of the distribution of minority carriers
in the base of a transistor laser and of the high-speed dynamics of the device. The modeling …

A method for enhancing operation of a bipolar light-emitting transistor includes the following
steps: providing a bipolar light-emitting transistor having emitter, base, and collector regions; …

A method for producing controllable light pulses includes the following steps: providing a
heterojunction bipolar transistor structure including collector, base, and emitter regions of …

Related US Application Data(57) ABSTRACT 63) Continuation-in-part of application No.
117068, 561,(63) filed on Feb. 28 EOs E. is a continuation-in-part A method for producing an …

A method for controlling operation of a transistor includes the following steps: providing a
bipolar transistor having emitter, base and collector regions; applying electrical signals to …

A method for enhancing operation of a bipolar light-emitting transistor includes the following
steps: providing a bipolar light-emitting transistor having emitter, base, and collector regions; …

A method for increasing the speed of a bipolar transistor, includes the following steps:
providing a bipolar transistor having emitter, base, and collector regions; providing …