The light reflection properties of Ge disk lattices on Si substrates are studied as a function of
the disk height and the gap width between disks. The interdisk spacing effect is observed …

The solid-state dewetting phenomenon in Ge layers on SiO2 is investigated as a function of
layer thickness d Ge (from 10 to 86 nm) and annealing temperature. The dewetting is …

High temperature annealing of thick (40–100 nm) Ge layers deposited on Si (100) at $400 C
leads to the formation of continuous films prior to their transformation into porous-like films …

Active light-emitting all-dielectric nanoantennas recently have demonstrated great potential
as highly efficient nanoscale light sources owing to their strong luminescent and Raman …

The solid-state dewetting phenomenon was used to obtain submicron-and micron-sized
SiGe particle arrays by the Ge deposition on Si (100) substrates. Their transmission and …

The light reflection spectra of Ge disk nanoresonators on a Si substrate are studied,
depending on their diameter (d) and height (h). The Ge disks, fabricated at temperatures …

The principal advantage of antireflection coatings consisting of subwavelength dielectric
particle arrays is their ability to change the propagation direction of incident electromagnetic …

The dewetting phenomenon that occurs during annealing of Ge films after their deposition
on oxidized Si surfaces at room temperature is studied. The agglomeration of Ge films into …

All-dielectric photonics is a rapidly developing field of optics and material science. The main
interest at visible and near-infrared frequencies is light management using high-refractive …

We present a novel self-assembly route to align SiGe quantum dots. By a combination of
theoretical analyses and experimental investigation, we show that epitaxial SiGe quantum …