The remarkable development in photovoltaic (PV) technologies over the past 5 years calls
for a renewed assessment of their performance and potential for future progress. Here, we …

The overlap of the principal luminescence band of the erbium ion with the low-loss optical
transmission window of silica optical fibres, along with the drive for integration of photonics …

Reducing non-radiative recombination in semiconducting materials is a prerequisite for
achieving the highest performance in light-emitting and photovoltaic applications. Here, we …

Absorbed sunlight in a solar cell produces electrons and holes. However, at the open-circuit
condition, the carriers have no place to go. They build up in density, and ideally, they emit …

Maximum possible photovoltaic performance is reached when solar cells are 100%
radiatively efficient, with different photovoltaic technologies at different stages in their …

The possibility of light generation and/or amplification in silicon has attracted a great deal of
attention for silicon-based optoelectronic applications owing to the potential for forming …

The many and diverse approaches to materials science problems have greatly enhanced
our ability to engineer the physical properties of semiconductors. Silicon, of all …

The radiative recombination coefficient B (T) of intrinsic crystalline silicon is determined as a
function of temperature over the temperature range 77–300 K. We observe that B (T) …

A variety of silicon-based nanostructures with dimensions in the 1–5 nm range now emit
tunable photoluminescence (PL) spanning the visible range. Achievement of high …

We report the first observation of Stimulated Raman Scattering (SRS) in silicon waveguides.
Amplification of the Stokes signal, at 1542.3 nm, of up to 0.25 dB has been observed in …