Ultrathin-Body GaN-on-Sapphire HEMT with Megahertz Switching Capability Under Prompt Irradiation Dose Rate Exceeding 1010 rad(Si)/s
This work demonstrates ultrathin-body GaN HEMTs on 6-inch sapphire substrate with robust
irradiation hardness against prompt dose rate (PDR) and single-event effect (SEE). By …
irradiation hardness against prompt dose rate (PDR) and single-event effect (SEE). By …
Investigation of SiNx Passivated Dual Field Plate AlGaN/GaN HEMTs on Silicon Carbide and Sapphire Substrates Under Radiation Environment
In this paper an in–depth analysis of SiN passivated AlGaN/GaN HEMTs on sapphire and
SiC substrate for radiation hardened operation has been presented. An exhaustive study …
SiC substrate for radiation hardened operation has been presented. An exhaustive study …
Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode
X Xie, S Sun, Z Zhao, P Zhang, J Wei, X Zhou… - Microelectronics …, 2024 - Elsevier
A vertical GaN-based field-effect transistor with an integrated MOS-channel diode (MCD) is
used to improve the reverse conduction characteristic and transient single-event effect …
used to improve the reverse conduction characteristic and transient single-event effect …
[HTML][HTML] Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage
S Sun, X Xie, P Zhang, Z Zhao, J Wei, X Luo - Journal of Science …, 2024 - Elsevier
Abstract A novel AlGaN/GaN HEMT is proposed to improve its single event transient (SET)
effect and breakdown characteristics. The device features an AlGaN back barrier layer and a …
effect and breakdown characteristics. The device features an AlGaN back barrier layer and a …
[HTML][HTML] Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped …
J Xiong, X Xie, J Wei, S Sun, X Luo - Micromachines, 2024 - pmc.ncbi.nlm.nih.gov
In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer
layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its …
layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its …