A Review on the Properties and Applications of WO3 Nanostructure-Based Optical and Electronic Devices
Y Yao, D Sang, L Zou, Q Wang, C Liu - Nanomaterials, 2021 - mdpi.com
Tungsten oxide (WO3) is a wide band gap semiconductor with unintentionally n-doping
performance, excellent conductivity, and high electron hall mobility, which is considered as a …
performance, excellent conductivity, and high electron hall mobility, which is considered as a …
Effect of annealing on forming-free bipolar resistive switching of Gd2O3 thin films
Oxide-based resistive switching devices are a promising candidate for non-volatile memory
applications. Here, we present a Gd 2 O 3-based non-volatile memory device deposited …
applications. Here, we present a Gd 2 O 3-based non-volatile memory device deposited …
Exploring non-stoichiometric SiOx thin film for non-volatile memory application
This article explores the electrical performance of capacitive memory and resistive switching
(RS) devices based on thin films of a single active layer of Silicon oxide (SiO x). The …
(RS) devices based on thin films of a single active layer of Silicon oxide (SiO x). The …
Capacitive and RRAM Forming-Free Memory Behavior of Electron-Beam Deposited Ta2O5 Thin Film for Nonvolatile Memory Application
The present study reports the presence of capacitive memory and forming-free resistive
random access memory (RRAM) in a tantalum pentoxide (Ta2O5) thin film (TF) device. The …
random access memory (RRAM) in a tantalum pentoxide (Ta2O5) thin film (TF) device. The …
Forming-free RRAM device based on HfO2 thin film for non-volatile memory application using E-beam evaporation method
This paper studies the deposition of Hafnium Oxide (HfO2) thin films (TF) based on forming-
free resistive random access memory (RRAM) devices using the method of electron beam …
free resistive random access memory (RRAM) devices using the method of electron beam …
A perspective study on Au-nanoparticle adorned TiO2-nanowire for non-volatile memory devices
KK Kashyap, LHJ Jire, P Chinnamuthu - Materials Today Communications, 2022 - Elsevier
In this article, we synthesized Au-nanoparticle (NP) adorned TiO 2-nanowire (NW) and TiO 2-
NW using glancing angle deposition technique (GLAD) for capacitive memory based …
NW using glancing angle deposition technique (GLAD) for capacitive memory based …
Improved Capacitive Memory in Glancing Angle Electron-Beam Synthesized Isotropic Bilayer n-TiO2/In2O3 Nanowires Array
P Pooja, P Chinnamuthu - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
We report on the memory performance study of vertically stacked TiO 2/In 2 O 3 metal oxides
heterostructure (MOH) nanowire (NW). Two typical structures p-Si/TiO 2 TF/TiO 2 NW/Ag and …
heterostructure (MOH) nanowire (NW). Two typical structures p-Si/TiO 2 TF/TiO 2 NW/Ag and …
Graphene oxide charge blocking layer with high K TiO2 nanowire for improved capacitive memory
Glancing angle deposition technique was adopted to fabricate TiO 2 nanowire (NW) over
spin coated graphene oxide (GO) thin-film (TF) for capacitive memory application. The …
spin coated graphene oxide (GO) thin-film (TF) for capacitive memory application. The …
Improvement of capacitive and resistive memory in WO3 thin film with annealing
In this study, electron beam evaporated tungsten oxide (WO3) thin film (TF) has been
investigated for both capacitive and resistive switching memory devices. The fabricated …
investigated for both capacitive and resistive switching memory devices. The fabricated …
Design of non-volatile capacitive memory using axial type-II heterostructure nanowires of NiO/β-Ga2O3
MC Pedapudi, JC Dhar - Journal of Materials Science: Materials in …, 2024 - Springer
The study presents a non-volatile memory (NVM) device created from an axial NiO-nanowire
(NW)/β-Ga2O3-NW heterostructure (HS) using GLAD within the RF/DC sputtering chamber …
(NW)/β-Ga2O3-NW heterostructure (HS) using GLAD within the RF/DC sputtering chamber …