This work reports a biosensor based on the dual cavity dielectric modulated ferroelectric
charge plasma Tunnel FET (FE-CP-TFET) with enhanced sensitivity. By incorporating …

Abstract The Tunnel Field Effect Transistor (TFET) device has emerged as the potential
candidate to replace the Field Effect Transistor (FET)--based biosensor for the label-free …

In this paper a new ferro material embedded structure is introduced between the tunneling
junction to gain and improve ON/OFF current ratio with steeper subthreshold slope. Various …

In this work, a novel Gallium Arsenide Antimonide (GaAsSb)/Indium Gallium Arsenide
(InGaAs) hetero-junction double-dual gate-gate stack Vertical Tunnel FET (HJ-VTFET) …

In this work, a triple metal gate-ferroelectric material-with SiGe heterojunction based vertical
structure of Tunnel field effect transistor (TMG-FE-SiGe-VTFET) is proposed and …

This work discusses a junction-less nanowire tunnel field effect transistor (JLN-TFET) that
combines the advantages of a junction-less field effect transistor (JLFET) and a tunnel field …

This work proposes a novel double gate hetero‐material tunnel field effect transistor for label
free biosensing applications. The device consists of III‐V semiconductor gallium arsenide …

The effect of ferroelectric material at tunneling junction is compared for the two different
configuration of Charge plasma and Junctionless of Vertical TFET structure. Various …

In this work, a gate stack Silicon doped HfO2 ferroelectric vertical TFET is proposed and its
various performance parameters are investigated and compared with the high-K HfO2 …

In this work, we contrasted the potential of Mg 2 Si/Si heterojunction-based dopingless (DL)
double gate tunnel field effect transistor (DGTFET) with conventional (C)-DL-DGTFET. The …