Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

K Hoo Teo, Y Zhang, N Chowdhury… - Journal of Applied …, 2021 - pubs.aip.org
GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …

GaN power integration for high frequency and high efficiency power applications: A review

R Sun, J Lai, W Chen, B Zhang - IEEE Access, 2020 - ieeexplore.ieee.org
High frequency and high efficiency operation is one of the premier interests in the signal and
energy conversion applications. The wide bandgap GaN based devices possess superior …

Piezoelectric pressure sensor based on flexible gallium nitride thin film for harsh-environment and high-temperature applications

NI Kim, YL Chang, J Chen, T Barbee, W Wang… - Sensors and Actuators A …, 2020 - Elsevier
Piezoelectric materials are promising for pressure sensors in a variety of industrial
applications such as automotive and petroleum fields. Typical piezoelectric sensors rely …

Sensor applications based on AlGaN/GaN heterostructures

KT Upadhyay, MK Chattopadhyay - Materials Science and Engineering: B, 2021 - Elsevier
Abstract Gallium Nitride (GaN) belongs to III-N family of compound semiconductors, which
albeit new, is well-established material system in the fields of high power, high temperature …

Generic wireless power transfer and data communication system based on a novel modulation technique

A Trigui, M Ali, S Hached, JP David… - … on Circuits and …, 2020 - ieeexplore.ieee.org
This paper presents a wireless power and downlink data transfer system for medical
implants operating over a single 10 MHz inductive link. The system is based on a Carrier …

A versatile SoC/SiP sensor interface for industrial applications: Implementation challenges

M Ali, A Hassan, M Honarparvar, M Nabavi… - IEEE …, 2022 - ieeexplore.ieee.org
We present in this paper design considerations and implementation challenges of a
proposed versatile SoC/SiP sensor interface intended for industrial applications. The …

[HTML][HTML] Circuit techniques in GaN technology for high-temperature environments

A Hassan, JP Noël, Y Savaria, M Sawan - Electronics, 2021 - mdpi.com
As a wide bandgap semiconductor, Gallium Nitride (GaN) device proves itself as a suitable
candidate to implement high temperature (HT) integrated circuits. GaN500 is a technology …

A versatile SoC/SiP sensor interface for industrial applications: Design considerations

M Ali, M Nabavi, A Hassan… - 2019 31st …, 2019 - ieeexplore.ieee.org
This paper presents design considerations and implementation challenges of a proposed
versatile SoC/SiP sensor interface intended for industrial applications. The proposed …

High-temperature flexible electric Piezo/pyroelectric bifunctional sensor with excellent output performance based on thermal-cyclized electrospun PAN/Zn (Ac) 2 …

R Yin, Y Li, W Li, F Gao, X Chen, T Li, J Liang, H Zhang… - Nano Energy, 2024 - Elsevier
High-temperature sensors are critical in petrochemical, aerospace, and automotive
industries. However, the inorganic piezoelectric materials for high-temperature sensors are …

Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations

M Faizan, K Han, X Wang, MZ Yousaf - IEEE Access, 2024 - ieeexplore.ieee.org
GaN high-electron-mobility transistor (HEMT) has superior features of wide band gap, high
electron mobility and very high electric field strength due to its material advantages. By using …