The silicon carbide (SiC) devices have faster switching speed than that of the conventional
silicon (Si) devices, which however may cause excessive device voltage overshoot. Larger …

New packaging solutions and power module structures are required to fully utilize the
benefits of emerging commercially available wide bandgap semiconductor devices …

In this article, a new configuration of the modular multilevel converter (MLC) based on the
parallel connection of three-level active-neutral-point-clamped (3L-ANPC) cells as well as its …

Wide band gap (WBG) semiconductors require packaging with reduced parasitic inductance
and capacitance. To achieve this, new packaging solutions are proposed that increase …

Compared with single-module applications, unbalanced stray parameters come about
frequently in the process of installing paralleled IGBT modules, which could result in some …

Commercially available silicon carbide (SiC) MOSFET power modules often have a design
based on existing packages previously used for silicon insulated-gate bipolar transistors …

Three-level (3L) converters are more susceptible to parasitics compared with two-level
converters because of their complicated structure with multiple switching loops. In this …

This article establishes an analytical model for the device drain-source overvoltage related
to the two loops in three-level active neutral point clamped (3L-ANPC) converters. Taking …

With the demands for increasing the power rating and improving reliability level of the high
power IGBT modules, there are further needs of understanding how to achieve stable …

The common source inductance is one of the major causes of deterioration of the switching
speed and susceptibility of the false triggering for semiconductor switching devices. Practical …