While silicon and gallium arsenide are dominant materials in modern micro-and
nanoelectronics, devices fabricated from them still use Si and GaAs substrates only …

Кремний является основным материалом электроники. Около 95% всех
полупроводниковых приборов производится с использованием кремниевых подложек …

Vertical incidence photodiodes were fabricated from Ge grown epitaxially on Si (100) by low-
energy plasma-enhanced chemical vapor deposition. Consideration of the energy band …

Progress in the fields of electronic and optical devices relies on the ability of the
semiconductor industry to fabricate components of ever-increasing complexity and …

Abstract The structure of Ge (105)−(1× 2) grown on Si (105) is examined by scanning
tunneling microscopy (STM) and first-principles calculations. The morphology evolution with …

We have determined the equilibrium step structures and surface morphology for the whole
range of monohydride-terminated (001)-terrace-plus-step silicon surfaces using scanning …

We present first-principles total-energy calculations which reveal microscopic structures of
the steps and mechanisms of the adatom diffusion on hydrogenated Si (100) surfaces …

The first observations of plastically deformed germanium made immediately clear that
dislocations introduced during a high-temperature deformation create acceptor states [1–5] …

Pure edge 90 misfit dislocations (MDs) are the most effective linear defects that combine the
substrate and the film with different lattice parameters. A system consisting of a nonstressed …

Silver (Ag) growth on H-terminated Si (001) surfaces with prepatterns of silicon (Si) dangling
bonds has been studied at room temperature using a scanning tunneling microscope (STM) …