This paper investigates the way to use Multi-layer neural network as a possible replacement
of numerical TCAD device simulation to study device characteristics using limited …

In the deep submicron regime, FinFET successfully suppresses the leakage current using a
3D fin-like channel substrate, which gets depleted and blocks possible leakage as the gate …

NFinFET transistors with various fin widths (110 nm, 115 nm, and 120 nm) are put into
measurements, and the data are collected. By using the modified model, the measure data …

Current–voltage characteristic curves of NFinFET are presented and fitted with modified
current–voltage (IV) formulas, where the modified term in the triode region is demonstrated …

Although extreme ultraviolet lithography (EUVL) has potential to enable 5-nm half-pitch
resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line …

In semiconductor industry, conventional method of device characteristics analysis using
TCAD based simulation is sometimes difficult. TCAD based device simulation gives the …

In this work, we present a machine-learning augmented compact modeling framework for
modeling process induced variations in advanced semiconductor devices. The framework …

Interface traps are of particular concern for highly scaled-down semiconductor devices. They
cause trapping and de-trapping of charge carriers and have an adverse effect on device …

FinFET transistors with fin channel lengths of 160 nm and 2000 nm and a planar MOSFET
transistor with channel lengths of 180 nm and 90 nm are presented with characteristic …

The impact of different variability sources on the transistor performance increases as devices
are scaled-down, being the metal grain granularity (MGG) and the line edge roughness …