Analysis of III-V material-based dual source T-channel junction-less TFET with metal implant for improved DC and RF performance
In this paper, two III-V material-based junctionless tunnel FET devices, D-1 and D-2, are
proposed. The proposed device D-1 has a low bandgap (GaSb-based) dual source and a …
proposed. The proposed device D-1 has a low bandgap (GaSb-based) dual source and a …
Investigation of Si1−XGeX source dual material stacked gate oxide pocket doped hetero-junction TFET for low power and RF applications
In this paper, the applicability of dual material stacked gate-oxide-Pocket doped-hetero-
junction tunnel field effect transistor (DMSGO-PD-HTFET) for low power switching and radio …
junction tunnel field effect transistor (DMSGO-PD-HTFET) for low power switching and radio …
Improvement of electrical performance in heterostructure junctionless TFET based on dual material gate
H Xie, H Liu, S Wang, S Chen, T Han, W Li - Applied Sciences, 2019 - mdpi.com
In this paper, a dual metallic material gate heterostructure junctionless tunnel field-effect
transistor (DMMG-HJLTFET) is proposed and investigated. We use the Si/SiGe …
transistor (DMMG-HJLTFET) is proposed and investigated. We use the Si/SiGe …
Junctionless tunnel field-effect transistor with a modified auxiliary gate, a novel candidate for high-frequency applications
In this paper, we propose a novel junctionless tunnel field-effect transistor that uses a
tunneling gate and a modified auxiliary gate. The first one is employed to enhance the …
tunneling gate and a modified auxiliary gate. The first one is employed to enhance the …
Use of metal strip in stacked gate oxide JLTFET improves device quality and single-event-transient effect
This study represents a stacked gate oxide junctionless tunneling field effect transistor
(JLTFET) which has metal strips in gate oxide layers. The metal strips make improvement in …
(JLTFET) which has metal strips in gate oxide layers. The metal strips make improvement in …
Effect of ambipolarity suppression in PNPN TFET with dopant segregated Schottky-drain technique
In this paper, a comparative analysis of ambipolarity suppression in conventional PNPN-
TFET (D-1) is studied using TCAD simulation. By replacing the drain with metal silicide, and …
TFET (D-1) is studied using TCAD simulation. By replacing the drain with metal silicide, and …
Impact of metal silicide source electrode on polarity gate induced source in junctionless TFET
Abstract Tunnel Field Effect Transistors (TFET) based on quantum mechanical band to band
tunneling (BTBT) are promising alternatives for low power analog applications. Additionally …
tunneling (BTBT) are promising alternatives for low power analog applications. Additionally …
A theoretical investigation of mole fraction-based N+ pocket doped stack oxide TFET considering ideal conditions for reliability issues
KK Nigam - Microelectronics Reliability, 2024 - Elsevier
Nowadays, reliability towards the interface trap charges of the semiconductor device is a
major grave concern. Therefore, we introduce, for the first time, a theoretical investigation of …
major grave concern. Therefore, we introduce, for the first time, a theoretical investigation of …
Investigation of RF and linearity performance of electrode work‐function engineered HDB vertical TFET
S Narwal, SS Chauhan - Micro & Nano Letters, 2019 - Wiley Online Library
This work realises a hetero‐dielectric buried oxide vertical tunnel field effect transistor (HDB
VTFET) and investigates its radio frequency (RF) and linearity characteristics. First time, the …
VTFET) and investigates its radio frequency (RF) and linearity characteristics. First time, the …
A new design approach to improve DC, analog/RF and linearity metrics of vertical TFET for RFIC design
SS Chauhan - Superlattices and Microstructures, 2018 - Elsevier
This paper presents a novel design of Vertical Tunnel Field Effect Transistor (VTFET) using
work-function engineering. In this work, we investigate the impact of work-function …
work-function engineering. In this work, we investigate the impact of work-function …