A snapshot review on flash lamp annealing of semiconductor materials
L Rebohle, S Prucnal, Y Berencen, V Begeza, S Zhou - MRS Advances, 2022 - Springer
Flash lamp annealing (FLA) is a non-equilibrium annealing method on the sub-second time
scale which excellently meets the requirements of thin-film processing. FLA has already …
scale which excellently meets the requirements of thin-film processing. FLA has already …
Photoluminescence from GaN implanted with Be and F
GaN samples are implanted with Be and F and annealed in different conditions to activate
the BeGa acceptors. Photoluminescence spectra are studied to recognize the defects. The …
the BeGa acceptors. Photoluminescence spectra are studied to recognize the defects. The …
Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg
To accelerate the development of GaN power devices, reproducible fabrication of p-type
GaN (p-GaN) segments by ion-implantation (I/I) that enables selective-area doping is …
GaN (p-GaN) segments by ion-implantation (I/I) that enables selective-area doping is …
Substitutional diffusion of Mg into GaN from GaN/Mg mixture
Y Itoh, S Lu, H Watanabe, M Deki, S Nitta… - Applied Physics …, 2022 - iopscience.iop.org
We evaluated Mg-diffusion into GaN from GaN/Mg mixture. The diffusion depth of Mg
increased with diffusion temperature from 1100 C to 1300 C, whereas the Mg concentration …
increased with diffusion temperature from 1100 C to 1300 C, whereas the Mg concentration …
Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN
We have investigated the impact of high-temperature Mg-implantation in GaN layers on
distribution of Mg-enriched defects using scanning transmission electron microscopy and …
distribution of Mg-enriched defects using scanning transmission electron microscopy and …
Effect of beam current on defect formation by high-temperature implantation of Mg ions into GaN
Y Itoh, H Watanabe, Y Ando, E Kano… - Applied Physics …, 2022 - iopscience.iop.org
We evaluated the beam current dependence of defect formation during Mg ion implantation
into GaN at a high temperature of 1100 C with two beam currents. Photoluminescence …
into GaN at a high temperature of 1100 C with two beam currents. Photoluminescence …
Lattice location studies of the amphoteric nature of implanted Mg in GaN
U Wahl, JG Correia, ÂRG Costa… - Advanced Electronic …, 2021 - Wiley Online Library
Despite the renewed interest in ion implantation doping of GaN, efficient electrical activation
remains a challenge. The lattice location of 27Mg is investigated in GaN of different doping …
remains a challenge. The lattice location of 27Mg is investigated in GaN of different doping …
Fabrication of GaN vertical junction barrier Schottky diode by Mg diffusion from shallow N/Mg ion-implantation segment
W Kwon, Y ITOH, A Tanaka, H Watanabe… - Applied Physics …, 2025 - iopscience.iop.org
A vertical GaN pn junction diode (PND) and junction barrier Schottky diode (JBSD) were
fabricated by selective Mg diffusion. Mg was diffused from a shallow N/Mg ion-implantation …
fabricated by selective Mg diffusion. Mg was diffused from a shallow N/Mg ion-implantation …
Er:LiNbO3 Quantum Memory Platform Optimized with Dynamic Defect Annealing
Lithium niobate (LiNbO3) exhibits poor radiation resistance when conventionally implanted
with Er at room temperature. To repair the structural disorder, high‐temperature post …
with Er at room temperature. To repair the structural disorder, high‐temperature post …
Unique features of FLEXion® tool for wide band gap and III–V semiconductor devices fabrication
F Torregrosa, G Mathieu, G Boccheciampe, S Morata… - MRS Advances, 2022 - Springer
Wide band gap and IIIV semiconductor devices are recently experiencing an incredible
market growth due to their use in new electric and autonomous vehicles, IOTs, and 5G …
market growth due to their use in new electric and autonomous vehicles, IOTs, and 5G …