In the present-day scenario of low-power electronics, there is a steady and increasing need
for an adequate device that can counteract the power dissipation issue due to the consistent …

Power consumption is the major concern for conventional CMOS based integrated circuit
and systems. Since there is a scope of lowering supply voltage with steep-subthreshold …

During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

Tunnel field effect transistors (TFETs) have emerged as one of the most promising post-
CMOS transistor technologies. In this paper, we: 1) review the perspectives of such devices …

In this work, we investigate by means of simulations the performance of basic digital, analog,
and mixed-signal circuits employing tunnel-FETs (TFETs). The analysis reviews and …

The diffusion of doping concentration in source/drain regions through ion implantation
technique extents to the channel, which decreases the inversion portion of channel and …

In this paper, the analog/mixed-signal performance is evaluated at device and circuit levels
for a III-V nanowire tunnel field effect transistor (TFET) technology platform and compared …

In this study, the analog and radio frequency (RF) functionality of an indium arsenide-gallium
antimonide (InAs-GaSb) tunnel field-effect transistor (TFET) with an InAs pocket layer is …

Steep sub-threshold interband tunnel field-effect transistors (TFETs) are promising
candidates for low-supply voltage applications with better performance than the traditional …

The gate–source overlap length () in the line tunneling FET (L-TFET) can be used as a
design parameter to improve the analog circuit performance. In this paper, we investigate …