Carbon nanotubes (CNTs) are ideal candidates for beyond-silicon nano-electronics
because of their high mobility and low-cost processing. Recently, assembled massively …

Unraveling the dominant charge transport mechanism in high-mobility amorphous oxide
semiconductors is still a matter of controversy. In the present study we extended the random …

Amorphous indium gallium zinc oxide (a-IGZO) is becoming an increasingly important
technological material. Transport in this material is conceptualized as the heavy disorder of …

In solution-processed oxide thin-film transistors, postdeposition thermal processing
significantly changes the film's transport properties and is essential for high-performance …

Metal oxides have been investigated for use in displays and wearable electronics, owing to
their high mobility in the amorphous state. In solution-processed oxide thin-film transistors …

We investigate the electrical transport in amorphous oxide semiconductors by applying the
percolation-based random band-edge model proposed by Nenashev et al.[Phys. Rev. B …

Flexible electronics are thin, lightweight, and bendable electronic devices that can be
integrated into a variety of products and applications. They are made using a range of …

Amorphous oxide semiconductors, such as InGaZnO (IGZO) materials, are distinguished in
the broad class of disordered semiconductors due to high values of charge carrier mobility …

Three-dimensional single-component ideal gas systems composed of model homogeneous
rigid molecules in various molecular shapes and sizes are simulated by a molecular Monte …

Плівки аморфних матеріалів стійкі до високоенергетичного опромінення. Тому прилади,
побудовані з використанням цих матеріалів, можуть працювати в умовах підвищеної …