A comparative study on the electrical properties and conduction mechanisms of Au/n-Si Schottky diodes with/without an organic interlayer
A Eroğlu, S Demirezen, Y Azizian-Kalandaragh… - Journal of Materials …, 2020 - Springer
In order to see an interlayer on the electrical parameters and conduction mechanisms
(CMs), both the metal–semiconductor (MS) and Au/(MgO-PVP)/n-Si Schottky diodes (SDs) …
(CMs), both the metal–semiconductor (MS) and Au/(MgO-PVP)/n-Si Schottky diodes (SDs) …
High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination
Y Gao, A Li, Q Feng, Z Hu, Z Feng, K Zhang… - Nanoscale research …, 2019 - Springer
Abstract The edge-terminated Au/Ni/β-Ga 2 O 3 Schottky barrier diodes were fabricated by
using argon implantation to form the high-resistivity layers at the periphery of the anode …
using argon implantation to form the high-resistivity layers at the periphery of the anode …
The reverse bias current–voltage–temperature (I–V–T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80 …
We analyzed current conduction mechanisms (CCMs) of the (Au/Ti)/Al 2 O 3/n-GaAs (MIS)
type SBDs in the wide temperature range (80–380 K) by 30 K steps using reverse bias …
type SBDs in the wide temperature range (80–380 K) by 30 K steps using reverse bias …
The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0. 001Ox interfacial layer at room …
To investigate the effect of 2% graphene cobalt (GC)-doped (Ca 3 Co 4 Ga 0.001 O x)
interfacial layer on the main electrical parameters, Au/n-Si (MS) Schottky barrier diodes …
interfacial layer on the main electrical parameters, Au/n-Si (MS) Schottky barrier diodes …
Study of barrier inhomogeneities using I–V–T characteristics of Mo/4H–SiC Schottky diode
In the present work we investigate the forward current–voltage (I–V) characteristics, over a
wide temperature range 298–498 K, of Mo/4H–SiC Schottky diode for which aluminum ion …
wide temperature range 298–498 K, of Mo/4H–SiC Schottky diode for which aluminum ion …
Effects of surface properties on barrier height and barrier inhomogeneities of platinum contacts to n-type 4H-SiC
L Huang, F Qin, S Li, D Wang - Applied Physics Letters, 2013 - pubs.aip.org
We investigated the Schottky barrier of Pt/4H-SiC contact as a function of 4H-SiC surface
properties which effectively controlled by electronic cyclotron resonance hydrogen plasma …
properties which effectively controlled by electronic cyclotron resonance hydrogen plasma …
Electronic transport of Au/(Ca1.9Pr0.1Co4Ox)/n-Si structures analysed over a wide temperature range
The barrier height (BH) of the Au/(Ca1. 9Pr0. 1Co4O x)/n-Si structure was evaluated in the
temperature range of 120–360 K using current–voltage (I–V) measurements. The zero-bias …
temperature range of 120–360 K using current–voltage (I–V) measurements. The zero-bias …
Barrier inhomogeneities and electronic transport of Pt contacts to relatively highly doped n-type 4H-SiC
L Huang, D Wang - Journal of Applied Physics, 2015 - pubs.aip.org
The barrier characteristics of Pt contacts to relatively highly doped (∼ 1× 10 18 cm− 3) 4H-
SiC were investigated using current-voltage (IV) and capacitance-voltage (CV) …
SiC were investigated using current-voltage (IV) and capacitance-voltage (CV) …
A comparative study on the electrical parameters of - Schottky diodes with and without interfacial layer
In order to compare the main electrical parameters such as ideality factor (n), barrier height
(BH)(Φ I–V), series (R s) and shunt (R sh) resistances and energy density distribution profile …
(BH)(Φ I–V), series (R s) and shunt (R sh) resistances and energy density distribution profile …
1.2-kV Low-Barrier 4H-SiC JBS Diodes by Virtue of P-Implants Across Dead Field of Current Flow
YL Zhang, P Liu, GY Lei… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
A low value of Schottky barrier height (SBH)(is highly desired to further reduce the power
loss in 4H-SiC junction barrier Schottky (JBS) diodes; however, the reduced results in …
loss in 4H-SiC junction barrier Schottky (JBS) diodes; however, the reduced results in …