From our own experience, we know that there is a gap to bridge between the scientists
focused on basic material research and their counterparts in a close-to-application …

The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …

Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1–x Zr x O2; HZO)
are a promising candidate for future applications, such as low-power memories and …

We employ flash infrared annealing to investigate the phase transition of formamidinium
lead triiodide (FAPbI3) thin films for their solar cell applications. Measuring the enthalpy …

The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic
phase of hafnia is proved. Epitaxial bilayers of Hf0. 5Zr0. 5O2 (HZO) and La0. 67Sr0 …

Neuromorphic computing architectures enable the dense colocation of memory and
processing elements within a single circuit. This colocation removes the communication …

Thin films based on stoichiometric hafnium zirconate doped and co-doped with La, Gd,
and/or Y have been grown by atomic layer deposition on TiN electrodes. The resulting TiN …

Ohmic, memristive synaptic weights are fabricated with a back‐end‐of‐line compatible
process, based on a 3.5 nm HfZrO4 thin film crystallized in the ferroelectric phase at only …

In this work, we investigate the accumulative polarization (P) switching characteristics in
ferroelectric (FE) thin films under the influence of sequential sub-coercive electric-field …

Brain-inspired computing emerged as a forefront technology to harness the growing amount
of data generated in an increasingly connected society. The complex dynamics involving …