Exploring Strategies for Performance Enhancement in Micro‐LEDs: a Synoptic Review of III‐V Semiconductor Technology

D Mouloua, M Martin, M Beruete, C Jany… - Advanced Optical …, 2024 - Wiley Online Library
III‐V semiconductors, known for their optoelectronic properties and versatile engineering
capabilities, play a crucial role in the fabrication of Micro light‐emitting diodes (Micro‐LEDs) …

Effect of plasmonic ag nanoparticles on emission properties of planar GaN nanowires

G Pozina, C Hemmingsson, N Abrikossova… - Nanomaterials, 2023 - mdpi.com
The combination of plasmonic nanoparticles and semiconductor substrates changes the
properties of hybrid structures that can be used for various applications in optoelectronics …

Modification of alkali metal nanoparticles for enhanced light absorption and photoemission of InGaN nanowire arrays

Z Cao, L Liu, J Tian, X Zhangyang, H Cheng, X Guo - Optical Materials, 2024 - Elsevier
Due to the important role played by local surface plasmon resonance (LSPR) in the fields of
photocatalysis and solar cells, this article investigates InGaN nanowire arrays adsorbed by …

Fröhlich resonance splitting in hybrid GaN nanowire-Ag nanoparticle structures

G Pozina, EI Girshova, N Abrikossova… - New Journal of …, 2024 - iopscience.iop.org
Plasmonic nanoparticles (NPs) have attracted significant attention due to their unique optical
properties and broad optoelectronic and photonic applications. We investigate modifications …

[图书][B] Group III-Nitride Semiconductor Optoelectronics

CJ Praharaj - 2023 - books.google.com
Group III-Nitride Semiconductor Optoelectronics Discover a comprehensive exploration of
the foundations and frontiers of the optoelectronics technology of group-III nitrides and their …

Strong Coupling of Exciton in Organic Material and Plasmonic Whispering Gallery Modes Localized on the Surface of Silver Nanoparticles

AV Belonovskii, VP Evtikhiev, MI Mitrofanov… - JETP Letters, 2023 - Springer
The interaction of plasmonic whispering gallery modes on the surface of silver nanospheres
with an exciton of the surrounding organic medium has been theoretically studied. DPAVBi …

On the Growth of InGaN Nanowires by Molecular-Beam Epitaxy: Influence of the III/V Flux Ratio on the Structural and Optical Properties

VO Gridchin, SD Komarov, IP Soshnikov… - Journal of Surface …, 2024 - Springer
In this study, for the first time, the influence of the III/V flux ratio on the structural and optical
characteristics of InGaN nanowires grown by plasma-assisted molecular beam epitaxy are …