Semiconductor nanowires exhibit numerous capabilities to advance the development of
future optoelectronic devices. Among the III–V material family, gallium phosphide (GaP) is …

The key components of photonic integrated circuits are nanoscale optica emitters and
nanowaveguides. III‐V semiconductor nanostructures are considered as the most promising …

Tailorable synthesis of axially heterostructured epitaxial nanowires (NWs) with a proper
choice of materials allows for the fabrication of novel photonic devices, such as a …

Semiconductor nanowires are the perfect platform for nanophotonic applications owing to
their resonant, waveguiding optical properties and technological capabilities providing …

In this paper, three types of microstructures are argued as substrates for electrochemical
deposition of Au nanodots. They include:(a) aero-GaN consisting of hollow GaN …

Semiconductor nanowires are known for their unusual geometry, providing unique
electronic and optical properties. Substrates with vertical nanowires have highly non-uniform …

We demonstrate flexible red light-emitting diodes based on axial GaPAs/GaP
heterostructured nanowires embedded in polydimethylsiloxane membranes with transparent …

Carbon dots (CDs) are promising nanostructures in the field of photonics owing to the ease
of fabrication, tunable and efficient emission. Gallium phosphide (GaP) nanowires are …

Efficient doping of semiconductor nanowires remains a major challenge towards the
commercialization of nanowire-based devices. In this work we investigate the growth …

The present work performs molecular dynamics simulations within model potential's
framework to investigate surface atoms' rearrangements, loading states, and stress …