Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …

Today, the silicon carbide (SiC) semiconductor is becoming the front runner in advanced
power electronic devices. This material has been considered to be useful for abrasive …

The fact that wide bandgap semiconductors are capable of electronic functionality at much
higher temperatures than silicon has partially fueled their development, particularly in the …

Particulate semiconductor photocatalysts are paramount for many solar energy conversion
technologies. In anisotropically shaped photocatalyst particles, the different constituent …

Silicon carbide (SiC) is a promising material for the development of high-temperature solid-
state electronics and transducers, owing to its excellent electrical, mechanical, and chemical …

The considerable investment in silicon technology has rarely addressed device use in harsh
environments such as high temperatures, aggressive media, and radiation exposure. A clear …

Reflecting changes in the field in the ten years since the publication of the first edition, The
Handbook of Photonics, Second Edition explores recent advances that have affected this …

Among the wide band-gap semiconductors, silicon carbide (SiC) is going to be used for high-
power electronics applications because of its unique physical properties, such as a high …

Advances in siliconcarbide microfabrication and growth process optimization for
siliconcarbide nanostructures are ushering in new opportunities for microdevices capable of …

Over the years, the fundamentals of VLSI technology have evolved to include a wide range
of topics and a broad range of practices. To encompass such a vast amount of knowledge …