This paper explores the temperature sensitivity of Inner-gate engineered junctionless silicon
nanotube FET (JL-SiNT-FET) on analog/RF performance. It is found that the reduction in the …

This paper investigates the performance of 6 T SRAM cell using high-K gate dielectric based
junctionless silicon nanotube FET (JLSiNTFET). It is observed that the use of high-K gate …

This paper for the first time investigates the effect of temperature variation on analog/RF
performance of SiO 2 as well as high-K gate dielectric based junctionless silicon nanotube …

In this work, the investigation of high‐K gate‐stack‐based junctionless (JL) double‐gate
(DG) metal‐oxide‐semiconductor field‐effect transistor (MOSFET) is carried out to study the …

This work investigates the delay performance of junctionless silicon nanotube (JLSiNT) field‐
effect transistor (FET) based 6T SRAM cell. The study demonstrates that the delay …

This work investigates the channel thickness dependency of high-k gate dielectric-based
complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a …

At the sub-22 nm technology node, junctionless FinFETs are regarded as advantageous
alternatives for conventional FinFET due to their simpler fabrication and uniform doping …

Junctionless FinFET devices are a substitute for conventional FinFET devices due to their
short channel effects and easy manufacturing at sub 22 nm technology node. The …

This article analyses the effect of ion implantation on electrical and circuit-level
characteristics of stacked oxide cylindrical gate (CG) junctionless accumulation mode (JAM) …

The Compute-in-memory (CIM) architecture has been offered as an emerging solution to the
Von-Neumann computing architecture's memory wall. The CIM design embeds functionality …