Insulators for 2D nanoelectronics: the gap to bridge
Nanoelectronic devices based on 2D materials are far from delivering their full theoretical
performance potential due to the lack of scalable insulators. Amorphous oxides that work …
performance potential due to the lack of scalable insulators. Amorphous oxides that work …
Conduction mechanism of valence change resistive switching memory: a survey
Resistive switching effect in transition metal oxide (TMO) based material is often associated
with the valence change mechanism (VCM). Typical modeling of valence change resistive …
with the valence change mechanism (VCM). Typical modeling of valence change resistive …
Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
A Padovani, L Larcher, O Pirrotta… - … on electron devices, 2015 - ieeexplore.ieee.org
We propose a model describing the operations of hafnium oxide-based resistive random
access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport …
access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport …
[HTML][HTML] Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation
We use a multi-scale modeling to study the time-dependent dielectric breakdown of an
amorphous (a-) HfO 2 insulator in a metal–oxide–metal capacitor. We focus on the role …
amorphous (a-) HfO 2 insulator in a metal–oxide–metal capacitor. We focus on the role …
Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach
S Aldana, P García-Fernández… - Journal of Physics D …, 2020 - iopscience.iop.org
A simulation study has been performed to analyze resistive switching (RS) phenomena in
valence change memories (VCM) based on a HfO 2 dielectric. The kernel of the simulation …
valence change memories (VCM) based on a HfO 2 dielectric. The kernel of the simulation …
Forming‐free grain boundary engineered hafnium oxide resistive random access memory devices
A model device based on an epitaxial stack combination of titanium nitride (111) and
monoclinic hafnia (11 1¯) is grown onto ac‐cut Al2O3‐substrate to target the role of grain …
monoclinic hafnia (11 1¯) is grown onto ac‐cut Al2O3‐substrate to target the role of grain …
Random telegraph noise in resistive random access memories: Compact modeling and advanced circuit design
FM Puglisi, N Zagni, L Larcher… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
In this paper, we report about the derivation of a physics-based compact model of random
telegraph noise (RTN) in HfO 2-based resistive random access memory (RRAM) devices …
telegraph noise (RTN) in HfO 2-based resistive random access memory (RRAM) devices …
Customized binary and multi-level HfO2−x-based memristors tuned by oxidation conditions
The memristor is a promising candidate for the next generation non-volatile memory,
especially based on HfO2− x, given its compatibility with advanced CMOS technologies …
especially based on HfO2− x, given its compatibility with advanced CMOS technologies …
Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries
We investigate the role of grains and grain boundaries (GBs) in the electron transport
through poly-crystalline HfO 2 by means of conductive atomic force microscopy (CAFM) …
through poly-crystalline HfO 2 by means of conductive atomic force microscopy (CAFM) …
Microscopic modeling of electrical stress-induced breakdown in poly-crystalline hafnium oxide dielectrics
L Vandelli, A Padovani, L Larcher… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
We present a quantitative physical model describing degradation of poly-crystalline HfO 2
dielectrics subjected to electrical stress culminating in the dielectric breakdown (BD). The …
dielectrics subjected to electrical stress culminating in the dielectric breakdown (BD). The …