Microscale radiation in thermophotovoltaic devices—a review
Fast depleting reserves of conventional energy sources has resulted in an urgent need for
increasing energy conversion efficiencies and recycling of waste heat. One of the potential …
increasing energy conversion efficiencies and recycling of waste heat. One of the potential …
GaSb photovoltaic cells for applications in TPV generators
AW Bett, OV Sulima - Semiconductor science and technology, 2003 - iopscience.iop.org
GaSb thermophotovoltaic (TPV) cells are one of the reasons for the renewed interest in TPV
technology. Today, they are the most suitable choice for modern TPV generators. This paper …
technology. Today, they are the most suitable choice for modern TPV generators. This paper …
Thin-film 'thermal well'emitters and absorbers for high-efficiency thermophotovoltaics
A new approach is introduced to significantly improve the performance of
thermophotovoltaic (TPV) systems using low-dimensional thermal emitters and photovoltaic …
thermophotovoltaic (TPV) systems using low-dimensional thermal emitters and photovoltaic …
GaSb-related materials for TPV cells
MG Mauk, VM Andreev - Semiconductor science and technology, 2003 - iopscience.iop.org
A survey of materials options and technologies for GaSb-related thermophotovoltaic (TPV)
cells is presented, followed by an overview of device design principles and issues. This …
cells is presented, followed by an overview of device design principles and issues. This …
High-quantum-efficiency 0.5 eV GaInAsSb/GaSb thermophotovoltaic devices
CA Wang, HK Choi, SL Ransom, GW Charache… - Applied physics …, 1999 - pubs.aip.org
We report high-performance lattice-matched GaInAsSb/GaSb thermophotovoltaic (TPV)
devices with a 0.5 eV band gap. The TPV structures were grown on GaSb substrates by …
devices with a 0.5 eV band gap. The TPV structures were grown on GaSb substrates by …
The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials
RM Biefeld - Materials Science and Engineering: R: Reports, 2002 - Elsevier
This article comprehensively reviews the growth of III–V antimony-based semiconductor
materials using metal-organic chemical vapor deposition (MOCVD). It does this by first …
materials using metal-organic chemical vapor deposition (MOCVD). It does this by first …
Selective and non-selective wet-chemical etchants for GaSb-based materials
O Dier, C Lin, M Grau, MC Amann - Semiconductor Science and …, 2004 - iopscience.iop.org
A series of wet-chemical etchants for materials lattice-matched to GaSb was investigated.
The etch rates for GaSb, AlAsSb, InAsSb and InAs with etch solutions based on KNa–tartaric …
The etch rates for GaSb, AlAsSb, InAsSb and InAs with etch solutions based on KNa–tartaric …
Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor-phase epitaxy
Studies on the materials development of Ga1− xInxAsySb1− y alloys for thermophotovoltaic
(TPV) devices are reported. Ga1− xInxAsySb1− y epilayers were grown lattice-matched to …
(TPV) devices are reported. Ga1− xInxAsySb1− y epilayers were grown lattice-matched to …
[图书][B] Гетероструктуры на основе четверных и пятерных твердых растворов соединений AIIIBV
ВВ Кузнецов, ЛС Лунин, ВИ Ратушный - 2003 - elibrary.ru
В книге обобщаются результаты исследований технологии получения и свойств
гетероструктур на основе четверных и пятерных твердых растворов соединений …
гетероструктур на основе четверных и пятерных твердых растворов соединений …
Antimonide-based devices for thermophotovoltaic applications
CW Hitchcock, RJ Gutmann, JM Borrego… - … on Electron Devices, 1999 - ieeexplore.ieee.org
Thermophotovoltaic (TPV) devices have been fabricated using ternary and quaternary
layers grown by metalorganic vapor phase epitaxy (MOVPE) on GaSb substrates. GaInSb …
layers grown by metalorganic vapor phase epitaxy (MOVPE) on GaSb substrates. GaInSb …