GaN: Processing, defects, and devices
SJ Pearton, JC Zolper, RJ Shul, F Ren - Journal of applied physics, 1999 - pubs.aip.org
The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …
electrical and optical properties of GaN is reviewed. Recent progress in the development of …
Gallium nitride based transistors
An overview is presented of progress in GaN electronic devices along with recent results
from work at UCSB. From 1995 to 2001, the power performance of AlGaN/GaN high electron …
from work at UCSB. From 1995 to 2001, the power performance of AlGaN/GaN high electron …
Improving performance and breakdown voltage in normally-off GaN recessed gate MIS-HEMTs using atomic layer etching and gate field plate for high-power device …
AC Liu, PT Tu, HC Chen, YY Lai, PC Yeh, HC Kuo - Micromachines, 2023 - mdpi.com
A typical method for normally-off operation, the metal–insulator–semiconductor-high
electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches …
electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches …
Influence of γ-rays on dc performance of AlGaN/GaN high electron mobility transistors
B Luo, JW Johnson, F Ren, KK Allums… - Applied physics …, 2002 - pubs.aip.org
AlGaN/GaN high electron mobility transistors (HEMTs) with different gate length and widths
were irradiated with Co 60 γ-rays to doses up to 600 Mrad. Little measurable change in dc …
were irradiated with Co 60 γ-rays to doses up to 600 Mrad. Little measurable change in dc …
Investigation of self-heating effects in submicrometer GaN/AlGaN HEMTs using an electrothermal Monte Carlo method
T Sadi, RW Kelsall, NJ Pilgrim - IEEE Transactions on Electron …, 2006 - ieeexplore.ieee.org
An electrothermal Monte Carlo (MC) method is applied in this paper to investigate electron
transport in submicrometer wurtzite GaN/AlGaN high-electron mobility transistors (HEMTs) …
transport in submicrometer wurtzite GaN/AlGaN high-electron mobility transistors (HEMTs) …
Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire
T Egawa, GY Zhao, H Ishikawa… - IEEE Transactions on …, 2001 - ieeexplore.ieee.org
A recessed gate high electron mobility transistor (HEMT) has been fabricated with
AlGaN/GaN heterostructure on a sapphire substrate using metalorganic chemical vapor …
AlGaN/GaN heterostructure on a sapphire substrate using metalorganic chemical vapor …
High-frequency measurements of AlGaN/GaN HEMTs at high temperatures
M Akita, S Kishimoto, T Mizutani - IEEE Electron Device Letters, 2001 - ieeexplore.ieee.org
High-frequency measurements of the 1.3-μm-long gate AlGaN-GaN HEMTs have been
performed at temperatures ranging from 23 to 187/spl deg/C. The cutoff frequency f T …
performed at temperatures ranging from 23 to 187/spl deg/C. The cutoff frequency f T …
GaN-based FETs for microwave power amplification
We review advances in GaN-based microwave power field-effect-transistors (FETs).
Evolution in device technology included metal-semiconductor-field-effect-transistors …
Evolution in device technology included metal-semiconductor-field-effect-transistors …
Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire
T Egawa, H Ishikawa, M Umeno, T Jimbo - Applied Physics Letters, 2000 - pubs.aip.org
A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been
grown on a sapphire substrate by metalorganic chemical vapor deposition. The two …
grown on a sapphire substrate by metalorganic chemical vapor deposition. The two …
Digital etching for highly reproducible low damage gate recessing on AlGaN/GaN HEMTs
A room temperature digital etching technique for aluminum gallium nitride has been
developed. An oxidizing agent and an acid have been used in a two step etching cycle to …
developed. An oxidizing agent and an acid have been used in a two step etching cycle to …