Material processing, performance and reliability of MoS2 field effect transistor (FET) technology-A critical review
In last the decade, Molybdenum-di-sulphide (MoS 2) based field effect transistors (FETs)
combined with the advancements in integrated circuit (IC) technology have found versatile …
combined with the advancements in integrated circuit (IC) technology have found versatile …
Origin of phonon-limited mobility in two-dimensional metal dichalcogenides
H Chang, H Wang, KK Song, M Zhong… - Journal of Physics …, 2021 - iopscience.iop.org
Metal dichalcogenides are novel two-dimensional (2D) semiconductors after the discovery
of graphene. In this article, phonon-limited mobility for six kinds of 2D semiconductors with …
of graphene. In this article, phonon-limited mobility for six kinds of 2D semiconductors with …
Overcoming the Thermodynamic Barrier of Alloying 2D Transition Metal Dichalcogenides
G Alboteanu, A Ya'akobovitz - Journal of Alloys and Compounds, 2024 - Elsevier
Alloying of two-dimensional (2D) transition metal dichalcogenides (TMDs) enables
modulation of their energy structure and bandgap, and thus, is crucially important for their …
modulation of their energy structure and bandgap, and thus, is crucially important for their …