A Novel DTSCR Structure with High Holding Voltage and Enhanced Current Discharge Capability for 28 nm CMOS Technology ESD Protection
Z Han, S Chen, H Liu, S Wang, B Ma, R Chen, X Fu - Micromachines, 2023 - mdpi.com
To cope with the much narrower ESD design window in 28 nm CMOS technology, a novel
diode-triggered silicon-controlled rectifier with an extra discharge path (EDP-DTSCR) for …
diode-triggered silicon-controlled rectifier with an extra discharge path (EDP-DTSCR) for …
[HTML][HTML] Ultra-Low-Voltage-Triggered Silicon Controlled Rectifier ESD Protection Device for 2.5 V Nano Integrated Circuit
R Chen, H Wei, H Liu, Z Liu, Y Chen - Nanomaterials, 2022 - mdpi.com
In this paper, an improved low-voltage-triggered silicon-controlled rectifier (LVTSCR) called
an ultra-low-voltage-triggered SCR (ULVTSCR) is proposed and fabricated in a 40-nm …
an ultra-low-voltage-triggered SCR (ULVTSCR) is proposed and fabricated in a 40-nm …
Effect of P-type Guard ring on the Turn-on Characteristics of Diode-triggered SCR
In this paper, the influence of inner p-type guard ring (PGR) on the triggering characteristics
of diode-triggered silicon-controlled rectifier (DTSCR) is studied. The ESD characteristics of …
of diode-triggered silicon-controlled rectifier (DTSCR) is studied. The ESD characteristics of …