Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …
expanding into other application areas including digital and quantum computing electronics …
Challenges and opportunities for high-power and high-frequency AlGaN/GaN high-electron-mobility transistor (HEMT) applications: A review
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …
the potential to deliver high power and high frequency with performances surpassing …
A cryogenic electro-optic interconnect for superconducting devices
A major challenge to the scalability of cryogenic computing platforms is the heat load
associated with the growing number of electrical cable connections between the …
associated with the growing number of electrical cable connections between the …
The science case and challenges of space-borne sub-millimeter interferometry
Ultra-high angular resolution in astronomy has always been an important vehicle for making
fundamental discoveries. Recent results in direct imaging of the vicinity of the supermassive …
fundamental discoveries. Recent results in direct imaging of the vicinity of the supermassive …
Magnetoresistive-coupled transistor using the Weyl semimetal NbP
Semiconductor transistors operate by modulating the charge carrier concentration of a
channel material through an electric field coupled by a capacitor. This mechanism is …
channel material through an electric field coupled by a capacitor. This mechanism is …
DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures
In this work, the device characteristics of GaN-based high-electron-mobility transistors
(HEMTs) were systematically investigated by the direct current (DC) and low-frequency …
(HEMTs) were systematically investigated by the direct current (DC) and low-frequency …
Highly scaled graded channel GaN HEMT with peak drain current of 2.48 A/mm
KH Hamza, D Nirmal, ASA Fletcher… - … -International Journal of …, 2021 - Elsevier
The dc and high frequency performances of Al composition Graded Channel AlGaN/GaN
high electron mobility transistor on GaN substrate was investigated and compared with …
high electron mobility transistor on GaN substrate was investigated and compared with …
Optimization of channel structures in InP HEMT technology for cryogenic low-noise and low-power operation
We report the impact from channel composition on the cryogenic low-noise performance at
low dc power for a 100-nm gate-length InGaAs-InAlAs-InP high-electron mobility transistor …
low dc power for a 100-nm gate-length InGaAs-InAlAs-InP high-electron mobility transistor …
Design and analysis of a 4.2 mW 4 K 6–8 GHz CMOS LNA for superconducting qubit readout
A Caglar, S Van Winckel, S Brebels… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
This article proposes a cryogenic inverter-based low noise amplifier (LNA) for qubit readout.
Its input impedance matching is realized by a high-ON-chip gate inductor and capacitive …
Its input impedance matching is realized by a high-ON-chip gate inductor and capacitive …
Sub-mW cryogenic InP HEMT LNA for qubit readout
The cryogenic indium phosphide (InP) high-electron-mobility transistor (HEMT) low-noise
amplifier (LNA) is used for the readout amplification of qubits at 4 K where cooling …
amplifier (LNA) is used for the readout amplification of qubits at 4 K where cooling …