Performance Evaluation of the Packaging of SiC Diodes in a 6.78 MHz Wireless Power Transfer System

P Wagle, I Nikiforidis, M Fukai… - PCIM Europe 2024; …, 2024 - ieeexplore.ieee.org
This paper evaluates the performance of three 1.2 kV Silicon Carbide diodes for high
frequency applications, including a custom packaged 20 A rated device by SanRex. The …

1 kW 6.78 MHz Push-Pull Φ2 Amplifier for Induction Heating

CH Lin, Z Ye, E Stolt… - 2024 IEEE Applied Power …, 2024 - ieeexplore.ieee.org
We propose the design of a push-pull class Φ 2 power amplifier capable of delivering 1 kW
at 6.78 MHz for induction heating to decarbonize industrial thermochemical processes. The …

Piezoelectric Based Class-E Resonant Inverter for Driving Surface Dielectric Barrier Discharge Plasma

M Yang, EA Stolt, Z Ye… - 2024 IEEE 10th …, 2024 - ieeexplore.ieee.org
The increasing development of distributed renewable energy enables the possibility of
plasma-assisted local nitrogen fixation process in farms and individual households for …

Comparison of GaN and Si Devices in a 50 MHz Class Φ2 Converter

Z Ye, C Lin, J Rivas-Davila - 2024 IEEE Applied Power …, 2024 - ieeexplore.ieee.org
GaN devices are promising for high frequency (HF) and very high frequency (VHF)
applications. But high frequency loss mechanisms such as dynamic R ds, on and C oss loss …

Wideband Push-Pull Class E Amplifier for RF Power Delivery

Z Tong, JM Rivas-Davila - … IEEE 24th Workshop on Control and …, 2023 - ieeexplore.ieee.org
This paper presents the design and implementation of a 13.56 MHz push-pull Class E power
amplifier with broad-band capabilities. The Class E amplifier utilizes SiC MOSFETs with a …

Class-Φ2 Power Amplifier With Resonant Gate Driver: High-Efficiency Power Amplifier for 50 MHz

Z Ye, CH Lin, J Rivas-Davila - IEEE Microwave Magazine, 2024 - ieeexplore.ieee.org
RF power amplifiers (PAs) serve an important role for various applications, such as
communication, induction heating, plasma generation, and wireless power transfer,,. With …

A Tunable Active Clamping Source Based High Frequency Single-Switch Resonant Gate Driving Circuit with Duty Cycle and Frequency Modulation Capability

W Liu, Y Zhu, M Liu - 2024 IEEE Wireless Power Technology …, 2024 - ieeexplore.ieee.org
Resonant Gate Driver (RGD) is an effective method to save gate driver loss at high
frequency. Most RGDs require at least two transistors to constitute the bridge structure …

[图书][B] Semiconductor Technology and Circuit Techniques for High-Performance MHZ-Range Power Converters

Z Tong - 2022 - search.proquest.com
Conventional power converters contain semiconductor devices switching in the tens to
hundreds of kilohertz (kHz) range. Extending the switching frequency to the multi-MHz range …