Temporal noise analysis and reduction method in CMOS image sensor readout circuit
Temporal noise such as thermal and low-frequency noise (LF noise) in the CMOS imager
readout circuit has been analyzed. In addition, the effect of correlated double sampling …
readout circuit has been analyzed. In addition, the effect of correlated double sampling …
Step-by-step implementation of an amplifier circuit with a graphene field-effect transistor on a printed-circuit board
Power amplifier circuits are implemented with graphene field-effect transistors (FETs),
capacitors and inductors, and their gain is improved step-by-step by adjusting the passive …
capacitors and inductors, and their gain is improved step-by-step by adjusting the passive …
On the RF series resistance extraction of nanoscale MOSFETs
GB Choi, SH Hong, SW Jung… - IEEE microwave and …, 2008 - ieeexplore.ieee.org
A new extraction method of series resistance based on the radio frequency S-parameter
measurement for sub-0.1 mum metal oxide semiconductor field-effect transistor is presented …
measurement for sub-0.1 mum metal oxide semiconductor field-effect transistor is presented …
0.7 V supply highly linear subthreshold low‐noise amplifier design for 2.4 GHz wireless sensor network applications
A low supply voltage and highly linear subthreshold CMOS low noise amplifier (LNA) for 2.4
GHz wireless sensor network applications is presented in this letter. We applied multiple …
GHz wireless sensor network applications is presented in this letter. We applied multiple …
Experimental investigation of quasi-ballistic carrier transport characteristics in 10-nm scale MOSFETs
In this paper, experimental investigation on quasi-ballistic carrier transportation is carried out
in 10-nm scale MOSFETs. In order to extract some ballistic parameters, the channel …
in 10-nm scale MOSFETs. In order to extract some ballistic parameters, the channel …
A 2.4 GHz CMOS ultra low power low noise amplifier design with 65 nm CMOS technology
In this paper, design approach of 2.4 GHz CMOS ultra low power Low Noise Amplifier (LNA)
using 65 nm CMOS technology is presented. Conventional Inductively degenerated …
using 65 nm CMOS technology is presented. Conventional Inductively degenerated …
Deembedding accuracy for device scale and interconnection line parasitics
In this letter, we investigate the deembedding accuracy of OPEN-SHORT (OS) and PAD-
OPEN-SHORT (POS) deembedding for transistor measurement and modeling. It is found …
OPEN-SHORT (POS) deembedding for transistor measurement and modeling. It is found …
Investigation of frequency dependent sensitivity of noise figure on device parameters in 65 nm CMOS
We have investigated the noise sensitivity of low noise amplifier (LNA) at different frequency.
This noise sensitivity analysis provides insights about noise parameters and it is very …
This noise sensitivity analysis provides insights about noise parameters and it is very …
Modeling of Temperature‐Dependent Noise in Silicon Nanowire FETs including Self‐Heating Effects
Silicon nanowires are leading the CMOS era towards the downsizing limit and its nature will
be effectively suppress the short channel effects. Accurate modeling of thermal noise in …
be effectively suppress the short channel effects. Accurate modeling of thermal noise in …
A unified channel thermal noise model for short channel MOS transistors
SD Yu - JSTS: Journal of Semiconductor Technology and …, 2013 - koreascience.kr
A unified channel thermal noise model valid in all operation regions is presented for short
channel MOS transistors. It is based on smooth interpolation between weak and strong …
channel MOS transistors. It is based on smooth interpolation between weak and strong …