Computing the properties of materials from first principles with SIESTA

N Kaltsoyannis, JE McGrady, D Sánchez-Portal… - … and applications of …, 2004 - Springer
SIESTA was developed as an approach to compute the electronic properties and perform
atomistic simulations of complex materials from first principles. Very large systems, with an …

[图书][B] Dermal absorption and toxicity assessment

MS Roberts - 2007 - taylorfrancis.com
The source Dermal Absorption and Toxicity Assessment supplies a state-of-the-art overview
of the dermal absorption process, and is divided into six well organized sections. Written by …

Stability and molecular pathways to the formation of spin defects in silicon carbide

EMY Lee, A Yu, JJ de Pablo, G Galli - Nature communications, 2021 - nature.com
Spin defects in wide-bandgap semiconductors provide a promising platform to create qubits
for quantum technologies. Their synthesis, however, presents considerable challenges, and …

Modelling skin permeability in risk assessment––the future

D Fitzpatrick, J Corish, B Hayes - Chemosphere, 2004 - Elsevier
The modelling of skin permeability is important for transdermal drug delivery, in the cosmetic
industry and for risk assessment attendant on dermal exposure to toxic substances. The two …

First principles analysis of impurities in silicon carbide grain boundaries

CM Atkinson, MC Guziewski, SP Coleman, SK Nayak… - Acta Materialia, 2021 - Elsevier
Silicon carbide is an important structural and electronic ceramic material that finds many
uses in a wide variety of applications that require stability at extreme conditions. In this study …

The microstructure and strength evolution of the CVI SiC matrix of Xe-implanted SiCf/SiC composites

Y Qin, C Zheng, Y Bi, J Zhang, X Li - Ceramics International, 2024 - Elsevier
SiC f/SiC composites are appealing as structural components of a nuclear reactor core
operating in the extreme environment. However, their properties can be affected by a Xe …

Deeper Insight into the Mechanisms Behind Sputter Damage in Silicon Solar Cells Based on the Example of Nanocrystalline Silicon Carbide

A Eberst, B Xu, K Bittkau, W Duan… - Advanced Physics …, 2024 - Wiley Online Library
Transparent conducting oxides, like indium tin oxide, enable lateral charge carrier transport
in silicon heterojunction solar cells. However, their deposition can damage the passivation …

First-principles studies of the diffusion of B impurities and vacancies in SiC

R Rurali, E Hernández, P Godignon, J Rebollo… - Physical Review B, 2004 - APS
In this paper we analyze, by means of first-principles electronic structure calculations, the
structural, energetic, and diffusive properties of B impurities in SiC as well as of vacancies …

Charge-dependent migration pathways for the Ga vacancy in

F El-Mellouhi, N Mousseau - Physical Review B—Condensed Matter and …, 2006 - APS
Using a combination of the local-basis ab initio program siesta and the activation-relaxation
technique we study the diffusion mechanisms of the gallium vacancy in GaAs. Vacancies are …

Nitrogen vacancies at InN (11¯ 00) surfaces: A theoretical study

A Terentjevs, A Catellani, G Cicero - Applied Physics Letters, 2010 - pubs.aip.org
We present an ab initio atomistic study of the effects of nitrogen vacancies both in InN bulk
and at (1 1 00) nonpolar surface and confirm that these defects act as n-type impurities …