Computing the properties of materials from first principles with SIESTA
N Kaltsoyannis, JE McGrady, D Sánchez-Portal… - … and applications of …, 2004 - Springer
SIESTA was developed as an approach to compute the electronic properties and perform
atomistic simulations of complex materials from first principles. Very large systems, with an …
atomistic simulations of complex materials from first principles. Very large systems, with an …
[图书][B] Dermal absorption and toxicity assessment
MS Roberts - 2007 - taylorfrancis.com
The source Dermal Absorption and Toxicity Assessment supplies a state-of-the-art overview
of the dermal absorption process, and is divided into six well organized sections. Written by …
of the dermal absorption process, and is divided into six well organized sections. Written by …
Stability and molecular pathways to the formation of spin defects in silicon carbide
Spin defects in wide-bandgap semiconductors provide a promising platform to create qubits
for quantum technologies. Their synthesis, however, presents considerable challenges, and …
for quantum technologies. Their synthesis, however, presents considerable challenges, and …
Modelling skin permeability in risk assessment––the future
D Fitzpatrick, J Corish, B Hayes - Chemosphere, 2004 - Elsevier
The modelling of skin permeability is important for transdermal drug delivery, in the cosmetic
industry and for risk assessment attendant on dermal exposure to toxic substances. The two …
industry and for risk assessment attendant on dermal exposure to toxic substances. The two …
First principles analysis of impurities in silicon carbide grain boundaries
Silicon carbide is an important structural and electronic ceramic material that finds many
uses in a wide variety of applications that require stability at extreme conditions. In this study …
uses in a wide variety of applications that require stability at extreme conditions. In this study …
The microstructure and strength evolution of the CVI SiC matrix of Xe-implanted SiCf/SiC composites
Y Qin, C Zheng, Y Bi, J Zhang, X Li - Ceramics International, 2024 - Elsevier
SiC f/SiC composites are appealing as structural components of a nuclear reactor core
operating in the extreme environment. However, their properties can be affected by a Xe …
operating in the extreme environment. However, their properties can be affected by a Xe …
Deeper Insight into the Mechanisms Behind Sputter Damage in Silicon Solar Cells Based on the Example of Nanocrystalline Silicon Carbide
Transparent conducting oxides, like indium tin oxide, enable lateral charge carrier transport
in silicon heterojunction solar cells. However, their deposition can damage the passivation …
in silicon heterojunction solar cells. However, their deposition can damage the passivation …
First-principles studies of the diffusion of B impurities and vacancies in SiC
In this paper we analyze, by means of first-principles electronic structure calculations, the
structural, energetic, and diffusive properties of B impurities in SiC as well as of vacancies …
structural, energetic, and diffusive properties of B impurities in SiC as well as of vacancies …
Charge-dependent migration pathways for the Ga vacancy in
F El-Mellouhi, N Mousseau - Physical Review B—Condensed Matter and …, 2006 - APS
Using a combination of the local-basis ab initio program siesta and the activation-relaxation
technique we study the diffusion mechanisms of the gallium vacancy in GaAs. Vacancies are …
technique we study the diffusion mechanisms of the gallium vacancy in GaAs. Vacancies are …
Nitrogen vacancies at InN (11¯ 00) surfaces: A theoretical study
A Terentjevs, A Catellani, G Cicero - Applied Physics Letters, 2010 - pubs.aip.org
We present an ab initio atomistic study of the effects of nitrogen vacancies both in InN bulk
and at (1 1 00) nonpolar surface and confirm that these defects act as n-type impurities …
and at (1 1 00) nonpolar surface and confirm that these defects act as n-type impurities …