Continued downscaling of semiconductor devices has placed stringent constraints on all
aspects of the fabrication process including plasma-assisted anisotropic etching. To address …

In this review, we discuss the progress of emerging dry processes for nanoscale fabrication.
Experts in the fields of plasma processing have contributed to addressing the increasingly …

Human beings have witnessed unprecedented developments since the 1760s using
precision tools and manufacturing methods that have led to ever-increasing precision, from …

New approaches for area-selective deposition (ASD) are becoming critical for advanced
semiconductor patterning. Atomic layer deposition (ALD) and atomic layer etching (ALE) …

Angstrom-level plasma etching precision is required for semiconductor manufacturing of sub-
10 nm critical dimension features. Atomic layer etching (ALE), achieved by a series of self …

Current (and future) microelectronics fabrication requirements place unprecedented
demands on the fidelity of plasma etching. As device features shrink to atomic dimensions …

As semiconductor device structures continue to approach the nanometer size range, new
challenges in the fabrication of such devices have arisen. For example, the need for high …

The scientific study of plasma discharges and their material interactions has been crucial to
the development of semiconductor process engineering and, by extension, the entire …

With the increasing interest in establishing directional etching methods capable of atomic
scale resolution for fabricating highly scaled electronic devices, the need for development …

Molecular dynamics simulations were performed to demonstrate nanometer-scale silicon (⁠
Si⁠) trench etching with silicon dioxide (⁠ SiO 2⁠) hard masks by chlorine (⁠ Cl+⁠) ion …