Growth of metal oxide nanostructures by thermal oxidation of metals under influence of external electric fields and electric current flow

J Piqueras, P Hidalgo - physica status solidi (a), 2021 - Wiley Online Library
Thermal oxidation of metals in a furnace or a hot plate is a simple and low‐cost method to
grow nanowires and other nanostructures of oxides of technological interest. In comparison …

CA19-9 and CEA biosensors in pancreatic cancer

M Ahmadipour, A Bhattacharya, M Sarafbidabad… - Clinica Chimica …, 2024 - Elsevier
Cancer is a complex pathophysiological condition causing millions of deaths each year.
Early diagnosis is essential especially for pancreatic cancer. Existing diagnostic tools rely on …

A self-powered solar-blind photodetector based on polyaniline/α-Ga2O3 p–n heterojunction

XY Sun, XH Chen, JG Hao, ZP Wang, Y Xu… - Applied Physics …, 2021 - pubs.aip.org
In this work, we demonstrated the self-powered solar-blind photodetector based on a
polyaniline/α-Ga 2 O 3 hybrid heterojunction. The resultant device exhibited distinct self …

Extremely low dark current and detection range extension of Ga2O3 UV photodetector using Sn alloyed nanostructures

A Mondal, MK Yadav, S Shringi, A Bag - Nanotechnology, 2020 - iopscience.iop.org
A unique metal–semiconductor–metal (MSM) photodetector has been fabricated using Sn
incorporation in Ga 2 O 3 forming Sn x Ga 1-x O nanostructures (Ns) with platinum (Pt) metal …

Band alignments of β-Ga2O3 with MgO, Al2O3 and MgAl2O4 measured by x-ray photoelectron spectroscopy

Z Liu, J Yu, P Li, X Wang, Y Zhi, X Chu… - Journal of Physics D …, 2019 - iopscience.iop.org
High-k and wide bandgap materials are necessary to work as gate dielectrics and surface
passivation layers in β-phase gallium oxide (β-Ga 2 O 3) based metal–oxide–semiconductor …

Epitaxial growth of β-Ga2O3 nanowires from horizontal to obliquely upward evolution

Y Miao, B Liang, Y Tian, T Xiong, S Sun, C Chen - Vacuum, 2021 - Elsevier
Changing the direction of horizontal nanowires to extend them in the z direction and grow
obliquely has important practical significance for achieving higher density integration and …

Mixed-phase β-Ga2O3 and SnO2 metal-semiconductor-metal photodetectors with extended detection range from 293 nm to 330 nm

MM Fan, L Cao, KL Xu, XY Li - Journal of Alloys and Compounds, 2021 - Elsevier
In this article, we demonstrate β-Ga 2 O 3 and SnO 2 mixed-phase thin films with dominant
(2¯ 01)-β-Ga 2 O 3 and (200)-SnO 2 orientations on c-face sapphire (c-Al 2 O 3) by chemical …

Modification of defects in SnO2 nanowire arrays by gallium doping for enhanced photodetection

P Chetri, JC Dhar - Journal of Alloys and Compounds, 2022 - Elsevier
Glancing angle deposition technique was used to grow as-deposited SnO 2 and also
Gallium doped SnO 2 (Ga: SnO 2) Nanowire (NW) arrays over Si substrate. The relative …

Room temperature intrinsic diluted magnetic semiconductor Li (Cd, Mn) As

Y Li, S Ding, Y Luo, P Yu, Y Cui, X Wang… - Journal of Materials …, 2022 - pubs.rsc.org
Room temperature intrinsic diluted ferromagnetic semiconductors (DMSs) are highly
desirable for application in spintronics. Here we report room temperature ferromagnetism in …

Modal Analysis of Widely Tunable Luminescent Optical Microcavities

M Alonso-Orts, E Nogales, JM San Juan, ML Nó… - Physical Review …, 2018 - APS
Optical microcavities are key elements in many photonic devices, and those based on
distributed Bragg reflectors (DBRs) enhance dramatically the end reflectivity, allowing for …