Growth of metal oxide nanostructures by thermal oxidation of metals under influence of external electric fields and electric current flow
J Piqueras, P Hidalgo - physica status solidi (a), 2021 - Wiley Online Library
Thermal oxidation of metals in a furnace or a hot plate is a simple and low‐cost method to
grow nanowires and other nanostructures of oxides of technological interest. In comparison …
grow nanowires and other nanostructures of oxides of technological interest. In comparison …
CA19-9 and CEA biosensors in pancreatic cancer
Cancer is a complex pathophysiological condition causing millions of deaths each year.
Early diagnosis is essential especially for pancreatic cancer. Existing diagnostic tools rely on …
Early diagnosis is essential especially for pancreatic cancer. Existing diagnostic tools rely on …
A self-powered solar-blind photodetector based on polyaniline/α-Ga2O3 p–n heterojunction
In this work, we demonstrated the self-powered solar-blind photodetector based on a
polyaniline/α-Ga 2 O 3 hybrid heterojunction. The resultant device exhibited distinct self …
polyaniline/α-Ga 2 O 3 hybrid heterojunction. The resultant device exhibited distinct self …
Extremely low dark current and detection range extension of Ga2O3 UV photodetector using Sn alloyed nanostructures
A unique metal–semiconductor–metal (MSM) photodetector has been fabricated using Sn
incorporation in Ga 2 O 3 forming Sn x Ga 1-x O nanostructures (Ns) with platinum (Pt) metal …
incorporation in Ga 2 O 3 forming Sn x Ga 1-x O nanostructures (Ns) with platinum (Pt) metal …
Band alignments of β-Ga2O3 with MgO, Al2O3 and MgAl2O4 measured by x-ray photoelectron spectroscopy
High-k and wide bandgap materials are necessary to work as gate dielectrics and surface
passivation layers in β-phase gallium oxide (β-Ga 2 O 3) based metal–oxide–semiconductor …
passivation layers in β-phase gallium oxide (β-Ga 2 O 3) based metal–oxide–semiconductor …
Epitaxial growth of β-Ga2O3 nanowires from horizontal to obliquely upward evolution
Y Miao, B Liang, Y Tian, T Xiong, S Sun, C Chen - Vacuum, 2021 - Elsevier
Changing the direction of horizontal nanowires to extend them in the z direction and grow
obliquely has important practical significance for achieving higher density integration and …
obliquely has important practical significance for achieving higher density integration and …
Mixed-phase β-Ga2O3 and SnO2 metal-semiconductor-metal photodetectors with extended detection range from 293 nm to 330 nm
MM Fan, L Cao, KL Xu, XY Li - Journal of Alloys and Compounds, 2021 - Elsevier
In this article, we demonstrate β-Ga 2 O 3 and SnO 2 mixed-phase thin films with dominant
(2¯ 01)-β-Ga 2 O 3 and (200)-SnO 2 orientations on c-face sapphire (c-Al 2 O 3) by chemical …
(2¯ 01)-β-Ga 2 O 3 and (200)-SnO 2 orientations on c-face sapphire (c-Al 2 O 3) by chemical …
Modification of defects in SnO2 nanowire arrays by gallium doping for enhanced photodetection
Glancing angle deposition technique was used to grow as-deposited SnO 2 and also
Gallium doped SnO 2 (Ga: SnO 2) Nanowire (NW) arrays over Si substrate. The relative …
Gallium doped SnO 2 (Ga: SnO 2) Nanowire (NW) arrays over Si substrate. The relative …
Room temperature intrinsic diluted magnetic semiconductor Li (Cd, Mn) As
Y Li, S Ding, Y Luo, P Yu, Y Cui, X Wang… - Journal of Materials …, 2022 - pubs.rsc.org
Room temperature intrinsic diluted ferromagnetic semiconductors (DMSs) are highly
desirable for application in spintronics. Here we report room temperature ferromagnetism in …
desirable for application in spintronics. Here we report room temperature ferromagnetism in …
Modal Analysis of Widely Tunable Luminescent Optical Microcavities
Optical microcavities are key elements in many photonic devices, and those based on
distributed Bragg reflectors (DBRs) enhance dramatically the end reflectivity, allowing for …
distributed Bragg reflectors (DBRs) enhance dramatically the end reflectivity, allowing for …