Corrosion and scaling have presented serious technical challenges to make 11 geothermal
power reliable and affordable. Due to the large quantities of geothermal water 12 that must …

Impurities and intentionally introduced additives can exert significant influence on crystal
growth, and they can play a critical role in crystallization processes. Additives can inhibit …

For the solution growth of silicon carbide, solvent inclusions are significant technological
issues, and methods to suppress the formation of solvent inclusions are investigated in this …

Demands for “green” additives that control the crystal growth and inhibit the scale formation
in industrial processes are growing as never before. Nanobubbles can be the green additive …

The effect of Na3 (PO3) 3 on the growth of KDP crystal (101) faces was studied by the
Michelson interference technique and atomic force microscopy. The experimental results …

We demonstrated numerical simulations of impurity-induced crystal growth hysteresis in
spiral growth. The numerical scheme combines two different methods: the phase-field …

In a crystal growth experiment conducted on the Japanese Experiment Module “Kibo”
aboard the International Space Station, an unknown phenomenon, ie, spontaneous …

This paper presents recent advances in the theory of multicomponent crystal growth from
gas or solution, focusing on the most common step-flow mechanisms: Burton-Cabrera …

Step pinning by immobile stoppers is the most important crystal growth inhibition
mechanism. It was first studied by Cabrera and Vermilyea in 1958, who considered the …

Growth hysteresis is one of the remarkable phenomena of crystal growth induced by
impurities; namely, the growth rates of crystal take different values between when …