Electronic defects in amorphous oxide semiconductors: A review
Amorphous oxide semiconductors (AOSs) have been commercialized since 2012 as thin‐
film transistor (TFT) backplanes in flat‐panel displays. This review first provides a brief …
film transistor (TFT) backplanes in flat‐panel displays. This review first provides a brief …
Recent progress on mixed-anion materials for energy applications
Mixed-anion compounds, in which multiple anions such as O2−, N3−, and H− are contained
in the same compound, have recently attracted attention. Because mixed-anion compounds …
in the same compound, have recently attracted attention. Because mixed-anion compounds …
Progress in niobium oxide-containing coatings for biomedical applications: a critical review
Typically, pure niobium oxide coatings are deposited on metallic substrates, such as
commercially pure Ti, Ti6Al4 V alloys, stainless steels, niobium, TiNb alloy, and Mg alloys …
commercially pure Ti, Ti6Al4 V alloys, stainless steels, niobium, TiNb alloy, and Mg alloys …
Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors
This review gives an overview of the recent progress in vacuum-based n-type transition
metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding …
metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding …
Instabilities in amorphous oxide semiconductor thin-film transistors
JF Conley - IEEE Transactions on Device and materials …, 2010 - ieeexplore.ieee.org
Thin-film transistors (TFTs) fabricated using amorphous oxide semiconductors (AOS) exhibit
good electron mobility (5 to>; 50 cm 2/V· s), they are transparent, and they can be processed …
good electron mobility (5 to>; 50 cm 2/V· s), they are transparent, and they can be processed …
Amorphous oxide semiconductors: From fundamental properties to practical applications
Amorphous oxide semiconductors (AOSs) have exceptional features of high visible
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …
Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors
HS Kim, SH Jeon, JS Park, TS Kim, KS Son, JB Seon… - Scientific reports, 2013 - nature.com
Ultra-definition, large-area displays with three-dimensional visual effects represent
megatrend in the current/future display industry. On the hardware level, such a “dream” …
megatrend in the current/future display industry. On the hardware level, such a “dream” …
The mobility enhancement of indium gallium zinc oxide transistors via low-temperature crystallization using a tantalum catalytic layer
High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved
through low-temperature crystallization enabled via a reaction with a transition metal …
through low-temperature crystallization enabled via a reaction with a transition metal …
Overview of electroceramic materials for oxide semiconductor thin film transistors
The flat panel display (FPD) market has been experiencing a rapid transition from liquid
crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the …
crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the …
Localized tail states and electron mobility in amorphous ZnON thin film transistors
The density of localized tail states in amorphous ZnON (a-ZnON) thin film transistors (TFTs)
is deduced from the measured current-voltage characteristics. The extracted values of tail …
is deduced from the measured current-voltage characteristics. The extracted values of tail …