β-Ga2O3 material properties, growth technologies, and devices: a review
M Higashiwaki - AAPPS Bulletin, 2022 - Springer
Rapid progress in β-gallium oxide (β-Ga 2 O 3) material and device technologies has been
made in this decade, and its superior material properties based on the very large bandgap …
made in this decade, and its superior material properties based on the very large bandgap …
A strategic review on gallium oxide based power electronics: Recent progress and future prospects
Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …
switching speeds, leading to rampant research in the field of next generation wide bandgap …
4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm− 2
A Bhattacharyya, S Sharma, F Alema… - Applied Physics …, 2022 - iopscience.iop.org
Abstract β-Ga 2 O 3 metal–semiconductor field-effect transistors are realized with superior
reverse breakdown voltages (V BR) and ON currents (I DMAX). A sandwiched SiN x …
reverse breakdown voltages (V BR) and ON currents (I DMAX). A sandwiched SiN x …
Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics
β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG) semiconductor
(EG∼ 4.8 eV), which promises generational improvements in the performance and …
(EG∼ 4.8 eV), which promises generational improvements in the performance and …
Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²
We demonstrate over 3 kV gate-pad-connected field plated (GPFP) β-Ga 2 O 3 lateral
MESFETs with high lateral figures of merit (LFOM) using metalorganic vapor phase epitaxy …
MESFETs with high lateral figures of merit (LFOM) using metalorganic vapor phase epitaxy …
[HTML][HTML] Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX
This Letter reports a high performance β-Ga 2 O 3 thin channel MOSFET with T gate and
degenerately doped (n++) source/drain contacts regrown by metal organic chemical vapor …
degenerately doped (n++) source/drain contacts regrown by metal organic chemical vapor …
Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage
S Sharma, L Meng, AFMAU Bhuiyan… - IEEE Electron …, 2022 - ieeexplore.ieee.org
This letter reports vacuum annealing of lateral field-plated-Ga2O3 MOSFETs with significant
current recovery and improvement in the on-state resistance,, after Reactive Ion Etching …
current recovery and improvement in the on-state resistance,, after Reactive Ion Etching …
2.1 kV (001)-β-Ga2O3 vertical Schottky barrier diode with high-k oxide field plate
We report a vertical β-Ga2O3 Schottky barrier diode (SBD) with BaTiO3 as field plate oxide
on a low doped thick epitaxial layer exhibiting 2.1 kV breakdown voltage. A thick drift layer of …
on a low doped thick epitaxial layer exhibiting 2.1 kV breakdown voltage. A thick drift layer of …
Critical review of Ohmic and Schottky contacts to β-Ga2O3
LAM Lyle - Journal of Vacuum Science & Technology A, 2022 - pubs.aip.org
Over the last decade, beta-phase gallium oxide (β-Ga2O3) has developed an extensive
interest for applications such as high-power electronics. Due to its ultrawide bandgap of∼ …
interest for applications such as high-power electronics. Due to its ultrawide bandgap of∼ …
β-Ga₂O₃ Lateral High-Permittivity Dielectric Superjunction Schottky Barrier Diode With 1.34 GW/cm² Power Figure of Merit
In this work, we demonstrate lateral-Ga2O3 Schottky barrier diode (SBD) with a high
permittivity (high-k) dielectric superjunction (SJ) structure. Trenches are patterned on the …
permittivity (high-k) dielectric superjunction (SJ) structure. Trenches are patterned on the …