Structural and optical characterization of GaAs and InGaAs thin films deposited by RF magnetron sputtering
R Bernal-Correa, S Gallardo-Hernández… - Optik, 2017 - Elsevier
III-V semiconductors thin film with high crystalline quality by non-crystal growth method is a
topic of interest due to its application in the field of optoelectronics, since it would …
topic of interest due to its application in the field of optoelectronics, since it would …
[HTML][HTML] Structural, optical and morphological properties of InxGa1-xAs layers obtained by RF magnetron sputtering
A Pulzara-Mora, J Montes-Monsalve… - Superficies y …, 2016 - scielo.org.mx
Indium gallium arsenide layers (InxGa1-xAs) were prepared on Silicon (100) and glass
substrates in an argon atmosphere by RF magnetron sputtering. The growth temperature …
substrates in an argon atmosphere by RF magnetron sputtering. The growth temperature …
Characterization of a fast grown GaAs: Sn thin film by thermionic vacuum arc
In this research, a tin doped gallium arsenide thin film was grown on a glass substrate by
means of the TVA technique in a very short period of time (70 s) and it's morphological …
means of the TVA technique in a very short period of time (70 s) and it's morphological …
InxGa1-xAs obtained from independent target via co-sputtering deposition
R Bernal-Correa, S Torres-Jaramillo… - Journal of Physics …, 2017 - iopscience.iop.org
This paper is focused on the preparation of InGaAs thin films on GaAs substrates by rf
magnetron sputtering technique, using the sputtering power as control means for the …
magnetron sputtering technique, using the sputtering power as control means for the …
[PDF][PDF] Structural and optical study of alternating layers of In and GaAs prepared by magnetron sputtering
S Torres-Jaramillo, C Pulzara-Mora… - Universitas …, 2019 - revistas.javeriana.edu.co
Currently, the obtention of nano-structures based on III-V materials is expensive. This calls
for novel and inexpensive nanostructure manufacturing approaches. In this work we report …
for novel and inexpensive nanostructure manufacturing approaches. In this work we report …