Electronic metadevices for terahertz applications

M Samizadeh Nikoo, E Matioli - Nature, 2023 - nature.com
The evolution of electronics has largely relied on downscaling to meet the continuous needs
for faster and highly integrated devices. As the channel length is reduced, however, classic …

[HTML][HTML] On large-signal modeling of GaN HEMTs: past, development and future

H Luo, W Hu, Y Guo - Chip, 2023 - Elsevier
In the past few decades, circuits based on gallium nitride high electron mobility transistor
(GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and …

An accurate characterization of capture time constants in GaN HEMTs

JL Gomes, LC Nunes, CF Gonçalves… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
This paper provides theoretical and experimental evidence that, contrary to what is a widely
reported belief, the capture time constant of GaN high-electron-mobility transistor (HEMTs) …

On the performance of GaN‐on‐silicon, silicon‐carbide, and diamond substrates

A Jarndal, L Arivazhagan… - International Journal of RF …, 2020 - Wiley Online Library
In this article, threading dislocations and its impact on the electrical and thermal
performance of GaN‐on‐Diamond (Dia),‐SiC, and‐Si high electron mobility transistor …

An evolutionary multilayer perceptron-based large-signal model of GaN HEMTs including self-heating and trapping effects

W Hu, YX Guo - IEEE Transactions on Microwave Theory and …, 2021 - ieeexplore.ieee.org
Neural networks are widely used to build large-signal models; an appropriate network
architecture is important for high model accuracy and good generalization ability. In this …

Physics‐based compact models of GaN HEMTs for high power RF applications: A review

S Mao, X Su, Q Wu, Y Wang, X Duan… - … Journal of Numerical …, 2024 - Wiley Online Library
The compact model plays a pivotal role as a critical link between device fabrication and
circuit design. While conventional compact model theories and techniques are generally …

A GaN HEMT global large-signal model including charge trapping for multibias operation

GP Gibiino, A Santarelli, F Filicori - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
This paper presents a novel empirical model for gallium nitride on silicon carbide high-
electron mobility transistors. A global state-space formulation describes charge trapping …

Dynamic dual-gate bias modulation for linearization of a high-efficiency multistage PA

G Lasser, MR Duffy, Z Popović - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
This paper investigates the linearization of high-efficiency multistage PAs through gate bias
modulation derived from the envelope of the RF input signal. We show that separate control …

A nonlinear empirical I/V model for GaAs and GaN FETs suitable to design power amplifiers

D Ochoa‐Armas… - … Journal of RF and …, 2021 - Wiley Online Library
This article presents an improved nonlinear empirical I/V model suitable for GaAs and GaN
FETs. The new drain‐to‐source current formulation accurately represents the symmetric and …

Investigation of fast and slow charge trapping mechanisms of GaN/A1GaN HEMTs through pulsed IV measurements and the associated new trap model

J Couvidat, NK Subramani, V Gillet… - 2018 IEEE/MTT-S …, 2018 - ieeexplore.ieee.org
This paper presents a new approach to characterize and model charge trapping effects of
GaN-based high electron mobility transistors (HEMTs). Two types of deep-level traps (slow …