The evolution of electronics has largely relied on downscaling to meet the continuous needs
for faster and highly integrated devices. As the channel length is reduced, however, classic …

In the past few decades, circuits based on gallium nitride high electron mobility transistor
(GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and …

This paper provides theoretical and experimental evidence that, contrary to what is a widely
reported belief, the capture time constant of GaN high-electron-mobility transistor (HEMTs) …

In this article, threading dislocations and its impact on the electrical and thermal
performance of GaN‐on‐Diamond (Dia),‐SiC, and‐Si high electron mobility transistor …

Neural networks are widely used to build large-signal models; an appropriate network
architecture is important for high model accuracy and good generalization ability. In this …

The compact model plays a pivotal role as a critical link between device fabrication and
circuit design. While conventional compact model theories and techniques are generally …

This paper presents a novel empirical model for gallium nitride on silicon carbide high-
electron mobility transistors. A global state-space formulation describes charge trapping …

This paper investigates the linearization of high-efficiency multistage PAs through gate bias
modulation derived from the envelope of the RF input signal. We show that separate control …

This article presents an improved nonlinear empirical I/V model suitable for GaAs and GaN
FETs. The new drain‐to‐source current formulation accurately represents the symmetric and …

This paper presents a new approach to characterize and model charge trapping effects of
GaN-based high electron mobility transistors (HEMTs). Two types of deep-level traps (slow …