Overview of real-time lifetime prediction and extension for SiC power converters
Remaining useful lifetime prediction and extension of Si power devices have been studied
extensively. Silicon carbide (SiC) power devices have been developed and commercialized …
extensively. Silicon carbide (SiC) power devices have been developed and commercialized …
Bias temperature instability and junction temperature measurement using electrical parameters in SiC power MOSFETs
JO Gonzalez, O Alatise - IEEE Transactions on Industry …, 2020 - ieeexplore.ieee.org
Junction temperature sensing is an integral part of both online and offline condition
monitoring where direct access to the bare die surface is not available. Given a defined …
monitoring where direct access to the bare die surface is not available. Given a defined …
Temperature-independent gate-oxide degradation monitoring of SiC MOSFETs based on junction capacitances
Gate-oxide degradation has been one of the major reliability challenges of SiC MOSFETs
and should be monitored carefully to avoid unexpected power converter failures. Various …
and should be monitored carefully to avoid unexpected power converter failures. Various …
Mission-Profile-Based Lifetime Prediction for a SiC mosfet Power Module Using a Multi-Step Condition-Mapping Simulation Strategy
L Ceccarelli, RM Kotecha, AS Bahman… - … on Power Electronics, 2019 - ieeexplore.ieee.org
The reliability analysis and lifetime prediction for SiC-based power modules is crucial in
order to fulfill the design specifications for next-generation power converters. This paper …
order to fulfill the design specifications for next-generation power converters. This paper …
Role of threshold voltage shift in highly accelerated power cycling tests for SiC MOSFET modules
H Luo, F Iannuzzo, M Turnaturi - IEEE Journal of Emerging and …, 2019 - ieeexplore.ieee.org
In silicon carbide (SiC) power MOSFETs, threshold voltage instability under high-
temperature conditions has potential reliability threats to long-term operation. In this paper …
temperature conditions has potential reliability threats to long-term operation. In this paper …
Wear-Out Condition Monitoring of IGBT and mosfet Power Modules in Inverter Operation
F Gonzalez-Hernando, J San-Sebastian… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
In this article, a condition monitoring system for the degradation assessment of power
semiconductor modules under switching conditions is presented. The proposed monitoring …
semiconductor modules under switching conditions is presented. The proposed monitoring …
Gate-driver integrated junction temperature estimation of SiC MOSFET modules
SiC MOSFET power modules are becoming global solutions in systems operating in harsh
environment, and due to large economic implications, achieving reliability of such systems is …
environment, and due to large economic implications, achieving reliability of such systems is …
Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions
A highly accelerated power cycling test platform using current source converter for SiC-
MOSFET power modules is proposed. The control principles of delta and average junction …
MOSFET power modules is proposed. The control principles of delta and average junction …
Study of current density influence on bond wire degradation rate in SiC MOSFET modules
This paper proposes a separated test method for studying the current effect on the ageing
process of a wire-bonded silicon carbide (SiC) MOSFET module under power cycling test …
process of a wire-bonded silicon carbide (SiC) MOSFET module under power cycling test …
Implications of Ageing Through Power Cycling on the Short-Circuit Robustness of 1.2-kV SiC mosfets
In this paper, the reliability performance of 1.2-kV silicon carbide (SiC) power mosfet
modules is investigated through the combination of both accelerated power-cycling tests …
modules is investigated through the combination of both accelerated power-cycling tests …