Overview of real-time lifetime prediction and extension for SiC power converters

Z Ni, X Lyu, OP Yadav, BN Singh… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
Remaining useful lifetime prediction and extension of Si power devices have been studied
extensively. Silicon carbide (SiC) power devices have been developed and commercialized …

Bias temperature instability and junction temperature measurement using electrical parameters in SiC power MOSFETs

JO Gonzalez, O Alatise - IEEE Transactions on Industry …, 2020 - ieeexplore.ieee.org
Junction temperature sensing is an integral part of both online and offline condition
monitoring where direct access to the bare die surface is not available. Given a defined …

Temperature-independent gate-oxide degradation monitoring of SiC MOSFETs based on junction capacitances

M Farhadi, F Yang, S Pu… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Gate-oxide degradation has been one of the major reliability challenges of SiC MOSFETs
and should be monitored carefully to avoid unexpected power converter failures. Various …

Mission-Profile-Based Lifetime Prediction for a SiC mosfet Power Module Using a Multi-Step Condition-Mapping Simulation Strategy

L Ceccarelli, RM Kotecha, AS Bahman… - … on Power Electronics, 2019 - ieeexplore.ieee.org
The reliability analysis and lifetime prediction for SiC-based power modules is crucial in
order to fulfill the design specifications for next-generation power converters. This paper …

Role of threshold voltage shift in highly accelerated power cycling tests for SiC MOSFET modules

H Luo, F Iannuzzo, M Turnaturi - IEEE Journal of Emerging and …, 2019 - ieeexplore.ieee.org
In silicon carbide (SiC) power MOSFETs, threshold voltage instability under high-
temperature conditions has potential reliability threats to long-term operation. In this paper …

Wear-Out Condition Monitoring of IGBT and mosfet Power Modules in Inverter Operation

F Gonzalez-Hernando, J San-Sebastian… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
In this article, a condition monitoring system for the degradation assessment of power
semiconductor modules under switching conditions is presented. The proposed monitoring …

Gate-driver integrated junction temperature estimation of SiC MOSFET modules

S Mocevic, V Mitrovic, J Wang, R Burgos… - IEEE Journal of …, 2021 - ieeexplore.ieee.org
SiC MOSFET power modules are becoming global solutions in systems operating in harsh
environment, and due to large economic implications, achieving reliability of such systems is …

Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions

H Luo, F Iannuzzo, F Blaabjerg… - 2017 IEEE Energy …, 2017 - ieeexplore.ieee.org
A highly accelerated power cycling test platform using current source converter for SiC-
MOSFET power modules is proposed. The control principles of delta and average junction …

Study of current density influence on bond wire degradation rate in SiC MOSFET modules

H Luo, F Iannuzzo, N Baker… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
This paper proposes a separated test method for studying the current effect on the ageing
process of a wire-bonded silicon carbide (SiC) MOSFET module under power cycling test …

Implications of Ageing Through Power Cycling on the Short-Circuit Robustness of 1.2-kV SiC mosfets

PD Reigosa, H Luo, F Iannuzzo - IEEE Transactions on Power …, 2019 - ieeexplore.ieee.org
In this paper, the reliability performance of 1.2-kV silicon carbide (SiC) power mosfet
modules is investigated through the combination of both accelerated power-cycling tests …