Wide band gap semiconductors are essential for today's electronic devices and energy
applications because of their high optical transparency, controllable carrier concentration …

Abstract Indium sulfide (In2S3) is a fundamental material for optoelectronic and photovoltaic
applications and a promising candidate for many technological applications because of its …

A solar cell capacitance simulator named SCAPS 1D was used in the prediction study of Cu
(In, Ga) Se 2 (CIGS), CuIn (S, Se) 2 (CISSe) and Cu 2 ZnSnS 4 (CZTS) based solar cells …

High-throughput computational and experimental techniques have been used in the past to
accelerate the discovery of new promising solar cell materials. An important part of the …

In recent years, the photodetectors gained much attention due to their wide range of
applications in industry, military, space and biological fields. In this work, the metal …

In this report the authors discuss the effect of diffusion of metallic indium on the
optoelectronic properties of chemical spray deposited indium sulfide (In2S3) thin films which …

Abstract Pristine and Cu, Mn-doped In 2 S 3 nanoparticles (NPs) were synthesized via a
simple, elegant co-precipitation route. The dopant (Cu, Mn metal) influence on the structural …

Abstract Indium Sulfide (In 2 S 3) is a promising candidate to replace Cadmium Sulfide
(CdS) as a buffer layer in thin film solar cells because of its n-type conductivity and wide …

This study focused on the effect of substrate temperature (350° C, 400° C, and 450° C) on
morphological, optical, and electrical properties of indium tin oxide (ITO) films deposited …

In this study, silver incorporated indium sulfide (In2S3) thin films have been deposited on
soda lime glass via spray pyrolysis technique. Structural and electrical properties have been …