Hot-carrier degradation modeling of decananometer nMOSFETs using the drift-diffusion approach
We extend our previously suggested drift-diffusion (DD)-based hot-carrier degradation
model to the case of decananometer transistors. Special attention is paid to the effect of …
model to the case of decananometer transistors. Special attention is paid to the effect of …
Hot Carrier Stress modeling: from degradation kinetics to trap distribution evolution
G Torrente, X Federspiel, D Rideau… - 2015 IEEE …, 2015 - ieeexplore.ieee.org
A complete TCAD model addressing Hot Carrier Degradation for Flash technology is
presented. After having underlined the need for a power law with a low exponent for the …
presented. After having underlined the need for a power law with a low exponent for the …
Symmetry-and similarity-aware volumetric meshing
F Rudolf - 2016 - repositum.tuwien.at
Volumetric mesh generation plays an important role in computer-aided engineering
processes. Often, objects used in computer-aided engineering, for example a gear, show …
processes. Often, objects used in computer-aided engineering, for example a gear, show …