Photoresponse characteristics of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode

AB Ulusan, A Tataroglu, Ş Altındal… - Journal of Materials …, 2021 - Springer
Photoresponse characteristics of the Au/(CoFe2O4-PVP)/n-Si (MPS) diode were
investigated using current–voltage (I–V) measurements achieved under dark and various …

Investigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO–PVA)/p-Si Schottky diodes using capacitance and conductance measurements

A Kaymaz, H Uslu Tecimer, E Evcin Baydilli… - Journal of Materials …, 2020 - Springer
Abstract In this study, Al/(ZnO–PVA)/p-Si (MPS type) Schottky diodes (SDs) were fabricated
instead of metal–semiconductor (MS) type SDs with traditional insulator interfacial layer …

Effect of zero bias Gamma ray irradiation on HfO2 thin films

S Maurya - Journal of Materials Science: Materials in Electronics, 2016 - Springer
Hafnium dioxide was proposed by the researchers as one of the dielectric materials that
could be used as dielectric layer in the fabrication of capacitor in MOS-based devices and …

The illumination intensity and applied bias voltage on dielectric properties of au/polyvinyl alcohol (Co, Zn‐doped)/n‐Si Schottky barrier diodes

H Uslu, Ş Altındal, T Tunç, İ Uslu… - Journal of Applied …, 2011 - Wiley Online Library
The Au/polyvinyl alcohol (PVA)(Co, Zn‐doped)/n‐Si Schottky barrier diodes (SBDs) were
exposed to various illumination intensities. Illumination effect on the dielectric properties has …

An evaluation of dielectric qualities by using frequency dependence in superbenzene-ring based organic polymer-semiconductors

D Akay, U Gökmen, SB Ocak - Materials Chemistry and Physics, 2020 - Elsevier
Dielectric characteristics and electrical conductivity of coronene (C 24 H 12) based metal-
polymer-semiconductor (MPS) structure were studied. Cleaning procedure was used to …

Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors

S Kaya, E Yilmaz - Journal of Radioanalytical and Nuclear Chemistry, 2014 - Springer
Abstract Effects of gamma-ray irradiation on the electrical characteristics of Al 2 O 3 MOS
capacitors such as barrier height, acceptor concentration, series resistance and interface …

The effect of gamma irradiation on electrical and dielectric properties of organic-based Schottky barrier diodes (SBDs) at room temperature

H Uslu, M Yıldırım, Ş Altındal, P Durmuş - Radiation Physics and Chemistry, 2012 - Elsevier
The effect of 60Co (γ-ray) irradiation on the electrical and dielectric properties of
Au/Polyvinyl Alcohol (Ni, Zn-doped)/n-Si Schottky barrier diodes (SBDs) has been …

Effects of gamma-ray irradiation on interface states and series-resistance characteristics of BiFeO3 MOS capacitors

S Kaya, A Aktag, E Yilmaz - Nuclear Instruments and Methods in Physics …, 2014 - Elsevier
The effects of radiation on the electrical-interface-state density (D it) and series resistance (R
s) characteristics of BiFeO 3 MOS capacitors were studied in this work. To study the …

A Detailed Study on Zero-Bias Irradiation Responses of MOS Capacitors

E Yilmaz, S Kaya - IEEE Transactions on Nuclear Science, 2016 - ieeexplore.ieee.org
La 2 O 3 as a possible dielectric layer for a capacitor in MOS-based radiation sensors has
been investigated under gamma irradiation doses up to 64 Gray. Capacitance-Voltage (CV) …

Effects of gamma irradiation on electrical parameters of metal–insulator–semiconductor structure with silicon nitride interfacial insulator layer

R Ertuğrul, A Tataroğlu - Radiation Effects and Defects in Solids, 2014 - Taylor & Francis
The effects of gamma irradiation on electrical parameters of Au/Si3N4/n-Si (MIS) structure
were investigated by using the capacitance–voltage (C–V) and conductance–voltage (G/ω …