Plasma cryogenic etching of silicon: from the early days to today's advanced technologies

R Dussart, T Tillocher, P Lefaucheux… - Journal of Physics D …, 2014 - iopscience.iop.org
The evolution of silicon cryoetching is reported in this topical review, from its very first
introduction by a Japanese team to today's advanced technologies. The main advances in …

Microstructural evolution during temperature gradient zone melting: Cellular automaton simulation and experiment

Q Zhang, H Xue, Q Tang, S Pan, M Rettenmayr… - Computational Materials …, 2018 - Elsevier
The microstructural evolution in mushy zones of alloys due to temperature gradient zone
melting (TGZM) is studied by simulations using a two-dimensional quantitative cellular …

Efficiently synthesized n-type CoSb3 thermoelectric alloys under TGZM effect

D Li, S Li, X Li, B Yang, H Zhong - Materials Science in Semiconductor …, 2021 - Elsevier
Skutterudite compounds, the structure of" phonon glass electron crystal"(PGEC), possess
excellent thermoelectric properties. Here, temperature gradient zone melting combined with …

[PDF][PDF] Thermodiffusion applications in MEMS, NEMS and solar cell fabrication by thermal metal doping of semiconductors

M Eslamian, MZ Saghir - Fluid Dynamics and Material Processing, 2012 - researchgate.net
In this paper recent advances pertinent to the applications of thermodiffusion or
thermomigration in the fabrication of micro and nano metal-doped semiconductor-based …

Thermodiffusion (thermomigration) and convection in molten semiconductor–metal layers

M Eslamian, MZ Saghir - International Journal of Thermal Sciences, 2011 - Elsevier
Thermodiffusion or thermomigration phenomenon and the presence of convection are
investigated in a binary molten semiconductor–metal layer heated from top or bottom. These …

Etching optimization of post aluminum-silicon thermomigration process residues

B Lu, G Gautier, D Valente, B Morillon… - Microelectronic …, 2016 - Elsevier
Al–Si thermomigration is an attractive means to produce through-wafer isolation walls for
power devices. The unintentional layers of Al2O3 formed due to the necessary oxygen …