Dielectric properties of MS diodes with Ag: ZnO doped PVP interfacial layer depending on voltage and frequency

SA Yerişkin, EE Tanrıkulu, M Ulusoy - Materials Chemistry and Physics, 2023 - Elsevier
This study focused on the complex dielectric-constant (ε*= ε′-jε''), complex electrical-
modulus (M*= Μ'+ Μ''), and ac electrical-conductivity (σ ac) of MS diodes with (Ag: ZnO)-PVP …

The capacitance/conductance and surface state intensity characteristics of the Schottky structures with ruthenium dioxide-doped organic polymer interface

M Ulusoy, Y Badali, G Pirgholi-Givi… - Synthetic Metals, 2023 - Elsevier
The electrical behaviors of the Schottky structures with a ruthenium dioxide (RuO 2) doped-
polyvinyl chloride (PVC) interface were executed with a wide frequency range (from 1 kHz to …

The investigation of frequency dependent dielectric properties and ac conductivity by impedance spectroscopy in the Al/(Cu-doped Diamond Like Carbon)/Au …

A Feizollahi Vahid, S Alptekin, N Basman… - Journal of Materials …, 2023 - Springer
In order to perform metal-interlayer-semiconductor (MIS) Schottky diodes (SDs) with a
greater barrier height (BH), various materials are used at M/S interface as interlayer. Here …

Dielectric properties and negative-capacitance/dielectric in Au/n-Si structures with PVC and (PVC: Sm2O3) interlayer

Ş Altındal, A Barkhordari… - Materials Science in …, 2022 - Elsevier
Abstract Both Au-(n-Si)(MS) structures with & without PVC and (Sm 2 O 3-PVC) interlayer
(MPS) has been performed onto n type Si wafer to compare dielectric and electric-modulus …

A comparison electric-dielectric features of Al/p-Si (MS) and Al/ (Al2O3:PVP)/p-Si (MPS) structures using voltage–current (V–I) and frequency–impedance (f–Z) …

B Akin, J Farazin, Ş Altındal… - Journal of Materials …, 2022 - Springer
In this work, both the Al-(p-Si)(MS) and Al-(Al2O3: PVP)-(p-Si)(MPS) structures were grown
onto the same p-type Si wafer in the same conditions to determine the (Al2O3: PVP) organic …

Origin of frequency and voltage dependent negative dielectric properties in the Al/p-Si Schottky diodes with (Cd0. 3Zn0. 7O) interfacial layer in the wide range of …

N Delen, SA Yerişkin, A Özbay, İ Taşçıoğlu - Physica B: Condensed Matter, 2023 - Elsevier
The real and imaginary parts of complex-dielectric (ε′, ε'') and electric-modulus (M′, M ″),
dielectric loss tangent (tanδ), and conductivity (σ) values of Al/(Cd 0.3 Zn 0.7 O)/p-Si …

The incorporation of ZnS/V/TBAI in CMC/PVP/PEG blend to modify the structural, linear/nonlinear optical, and the electrical properties

AM El-naggar, ZK Heiba, AM Kamal… - Journal of Materials …, 2023 - Springer
In order to create undoped and doped sodium carboxymethyl cellulose/polyvinyl
pyrrolidone/polyethylene glycol (CMC/PVP/PEG) blends with, ZnS/V and TBAI, the solution …

Variation of electrical and dielectric characteristics of Schottky diodes (SDs) depending on the existence of PVC and carbon-nanotube (CNT)-doped PVC interlayers

E Erbilen Tanrıkulu - Journal of Materials Science: Materials in Electronics, 2023 - Springer
Here, the effects of PVC and carbon-nanotube (CNT)-doped PVC interlayers on the
electrical and dielectric properties of Au/(n-Si) Schottky diode (SD) were investigated …

[HTML][HTML] Excellent giant dielectric properties over wide temperatures of (Al, Sc) 3+ and Nb5+ doped TiO2

P Siriya, N Chanlek, P Srepusharawoot, P Thongbai - Results in Physics, 2022 - Elsevier
The dielectric properties of TiO 2 triple–doped with Al 3+/Sc 3+/Nb 5+(ASNTO) prepared by
a conventional mixed route were studied. Pure rutile–TiO 2, highly dense microstructure and …

On a detail examination of frequency and voltage dependence of dielectric, electric modulus, ac conductivity (σac) of the Al/DLC/p-Si structures between 2 kHz and 1 …

E Balcı, AF Vahid, B Avar, Ş Altındal - Physica B: Condensed Matter, 2024 - Elsevier
In this study, the frequency/voltage dependent profiles of the real/imaginary parts of the
complex-dielectric (ε′, ε"), electric-modulus (M′, M"), impedance (Z′, Z"), loss-tangent …