In this paper, a novel structure of gate-all-around vertical TFET (GAA-VTFET) is proposed
and investigated for the first time with the help of 3D TCAD simulator. It is found that GAA …

The favorable electrostatic potential and tunneling underneath the overall gate region, which
prevents legitimate source to drain tunneling, controllability over the gate is assisted in …

In this work, the performance of the heterojunction L-Tunnel Field Effect Transistor (LTFET)
has been analyzed with different engineering techniques such as bandgap engineering …

In order to achieve reliability improvement in metal–oxidesemiconductor field-effect
transistor (MOSFET), the asymmetric MOSFET has been proposed and investigated. The …

In this manuscript, a novel line tunneling based gate-on-source-only TFET with inverted T-
shaped channel (ITGOSO-VTFET) is proposed and investigated using Synopsis TCAD 2-D …

Controllability over the gate is facilitated in vertical TFET formations because of the favorable
electrostatic potential and tunneling under the entire gate region, inhibiting direct source to …

In this study, we developed a capacitorless dynamic random-access memory (DRAM)(1T-
DRAM) device based on a junctionless (JL) bulk-fin field-effect transistor structure with …

For improving self-heating effect (SHE) in Ge vertically stacked gate-all-around (GAA)
nanowire (NW) p-type metal-oxide-semiconductor field-effect transistor (pMOSFET) …

For improving retention characteristics in the NOR flash array, aluminum oxide (Al2O3,
alumina) is utilized and incorporated as a tunneling layer. The proposed tunneling layers …

In this paper, we present a comparative study on the impact of work function variations
(WFV) between the III-V heterojunction and homojunction tunnel field-effect transistors …