N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
Electronic surface and dielectric interface states on GaN and AlGaN
GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …
devices; however, they are plagued by a high density of interface states that affect device …
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures
O Ambacher, J Smart, JR Shealy… - Journal of applied …, 1999 - pubs.aip.org
AlGaN/GaN heterostructure field-effect transistors HFETs have been a subject of intense
recent investigation and have emerged as attractive candidates for high voltage, high-power …
recent investigation and have emerged as attractive candidates for high voltage, high-power …
Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures
O Ambacher, J Majewski, C Miskys… - Journal of physics …, 2002 - iopscience.iop.org
The macroscopic nonlinear pyroelectric polarization of wurtzite Al x Ga 1-x N, In x Ga 1-x N
and Al x In 1-x N ternary compounds (large spontaneous polarization and piezoelectric …
and Al x In 1-x N ternary compounds (large spontaneous polarization and piezoelectric …
[图书][B] Heteroepitaxy of semiconductors: theory, growth, and characterization
In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …
explosive growth of the electronics industry and the development of a myriad of …
Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy
D Li, M Sumiya, S Fuke, D Yang, D Que… - Journal of Applied …, 2001 - pubs.aip.org
Etching characteristics of nondoped GaN films with the polar surface in KOH solution have
been investigated. It is confirmed that the continuous etching in KOH solution takes place …
been investigated. It is confirmed that the continuous etching in KOH solution takes place …
The polarity of GaN: a critical review
ES Hellman - Materials Research Society Internet Journal of Nitride …, 1998 - cambridge.org
GaN, AlN and InGaN have a polar wurtzite structure and epitaxial films of these materials
typically grow along the polar axis. Although the polarity of these nitrides has been studied …
typically grow along the polar axis. Although the polarity of these nitrides has been studied …
Structure of GaN (0001): The laterally contracted Ga bilayer model
We discuss the energetics and structure of a laterally contracted Ga bilayer model for the Ga-
rich pseudo-1× 1 phase of the GaN (0001) surface. First-principles total energy calculations …
rich pseudo-1× 1 phase of the GaN (0001) surface. First-principles total energy calculations …
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
Molecular beam epitaxy growth of GaN, AlN and InN
X Wang, A Yoshikawa - Progress in crystal growth and characterization of …, 2004 - Elsevier
III-Nitrides receive much research attention and obtain significant development due to their
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …