The status of research on both wurtzite and zinc‐blende GaN, AlN, and InN and their alloys
is reviewed including exciting recent results. Attention is paid to the crystal growth …

Wide bandgap GaN has long been sought for its applications to blue and UV emitters and
high temperature/high power electronic devices. Recent introduction of commercial blue and …

Semiconductor Surfaces and Interfaces deals with structural and electronic properties of
semiconductor surfaces and interfaces. The first part introduces the general aspects of …

Semiconductor Materials presents physico-chemical, electronic, electrical, elastic,
mechanical, magnetic, optical, and other properties of a vast group of elemental, binary, and …

Compact solid-state deep-ultraviolet (DUV) light-emitting diodes (LEDs) go far beyond
replacing conventional DUV sources such as mercury lamps. DUV LEDs enable new …

We review recent progress in the group-III nitride and related materials, and electronic and
optical devices based on them. Blue and UV (eg ultra violet) emitters and detectors, and …

Gallium nitride thin films grown on sapphire substrates were successfully separated and
transferred onto Si substrates using single 38 ns KrF excimer laser pulses directed through …

Reactive‐ion molecular‐beam epitaxy has been used to grow epitaxial hexagonal‐structure
α‐GaN on Al2O3 (0001) and Al2O3 (011̄2) substrates and metastable zinc‐blende …

GaN films have been epitaxially grown onto (001) Si by electron cyclotron resonance
microwave‐plasma‐assisted molecular‐beam epitaxy, using a two‐step growth process, in …

Improvements in wide-band-gap III–V nitride material quality have increased interest in
heterojunction device applications based on GaN, AlN, and their alloys. 1–3 Accurate …