The energy band alignment at interfaces of semiconducting oxides is of direct relevance for
the electrical function of electronic devices made with such materials. The most important …

Nanoporous SnO2–ZnO heterojunction nanocatalyst was prepared by a straightforward two-
step procedure involving, first, the synthesis of nanosized SnO2 particles by homogeneous …

Mirror twin grain boundaries (MTBs) exist at the interface between two grains of 60 rotated
hexagonal transition metal dichalcogenides (TMDC). These grain boundaries form a regular …

Stacking two-dimensional materials in so-called van der Waals (vdW) heterostructures, like
the combination of GaSe and graphene, provides the ability to obtain hybrid systems that are …

Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor,
insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic …

Transition metal dichalcogenides (TMDs) have gained significant attention as next-
generation semiconductor materials that could potentially overcome the integration limits of …

Earth-abundant NiO/anatase TiO2 heteronanostructures were prepared by a straightforward
one-pot sol–gel synthetic route followed by a suitable thermal post-treatment. The resulting …

We investigated electrical and photoelectrical properties of graphene sandwiched
WSe2/GaSe van der Waals heterojunctions. The device showed a high rectification ratio up …

The efficient visible-light-sensitized Ag3PO4/ZnO composites with various weight percents of
Ag3PO4 were prepared by a facile ball milling method. The photocatalysts were …

The electronic structure and the highest occupied molecular orbitals (HOMO)/the lowest
unoccupied molecular orbitals (LUMO) alignment at the molecular semiconductor …