Oxide-based resistive switching-based devices: fabrication, influence parameters and applications

R Khan, N Ilyas, MZM Shamim, MI Khan… - Journal of Materials …, 2021 - pubs.rsc.org
In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …

Recent advances in synaptic nonvolatile memory devices and compensating architectural and algorithmic methods toward fully integrated neuromorphic chips

K Byun, I Choi, S Kwon, Y Kim, D Kang… - Advanced Materials …, 2023 - Wiley Online Library
Nonvolatile memory (NVM)‐based neuromorphic computing has been attracting
considerable attention from academia and the industry. Although it is not completely …

Highly efficient back-end-of-line compatible flexible Si-based optical memristive crossbar array for edge neuromorphic physiological signal processing and bionic …

D Kumar, H Li, DD Kumbhar, MK Rajbhar, UK Das… - Nano-Micro Letters, 2024 - Springer
The emergence of the Internet-of-Things is anticipated to create a vast market for what are
known as smart edge devices, opening numerous opportunities across countless domains …

Demonstration of electronic and optical synaptic properties modulation of reactively sputtered zinc-oxide-based artificial synapses

C Mahata, J Park, M Ismail, S Kim - Journal of Alloys and Compounds, 2023 - Elsevier
A stable and highly controllable multistate analog memory system was developed using ZnO-
based memristors. Indium–tin oxide (ITO)/ZnO/ITO memristors exhibited electrical and …

Long-term and short-term plasticity of Ta2O5/HfO2 memristor for hardware neuromorphic application

JH Ryu, C Mahata, S Kim - Journal of Alloys and Compounds, 2021 - Elsevier
Here in, we introduce a Pt/Ta 2 O 5/HfO 2/TiN memristor with enhanced resistive switching
behavior, these conductive effects were induced by inserting a HfO 2 layer. We demonstrate …

Oxygen Vacancy Transition in HfOx‐Based Flexible, Robust, and Synaptic Bi‐Layer Memristor for Neuromorphic and Wearable Applications

A Saleem, D Kumar, A Singh… - Advanced Materials …, 2022 - Wiley Online Library
In this work, a reliable bilayer flexible memristor is demonstrated using TaOx/HfOx Bi‐layer
(BL) to mimic synaptic characteristics by using oxygen concentration engineering in the …

Improved synaptic performances with tungsten-doped indium-tin-oxide alloy electrode for tantalum oxide-based resistive random-access memory devices

C Mahata, J Pyo, B Jeon, M Ismail, J Moon… - … Composites and Hybrid …, 2023 - Springer
A reliable oxide-based tungsten-doped indium-tin-oxide/tantalum oxide/titanium nitride (W-
ITO/TaOx/TiN) memristor with controllable memory states and synaptic properties for …

ZnO-based hybrid nanocomposite for high-performance resistive switching devices: Way to smart electronic synapses

A Kumar, K Preeti, SP Singh, S Lee, A Kaushik… - Materials Today, 2023 - Elsevier
Neuromorphic computing systems inspired by the human brain emulate biological synapses
electronically for information handling and processing. Recently, memristive switching …

Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system

J Park, H Ryu, S Kim - Scientific Reports, 2021 - nature.com
Ideal resistive switching in resistive random-access memory (RRAM) should be ensured for
synaptic devices in neuromorphic systems. We used an Ag/ZnO/TiN RRAM structure to …

Resistive switching and synaptic characteristics in ZnO/TaON-based RRAM for neuromorphic system

I Oh, J Pyo, S Kim - Nanomaterials, 2022 - mdpi.com
We fabricated an ITO/ZnO/TaON/TaN device as nonvolatile memory (NVM) with resistive
switching for complementary metal-oxide-semiconductor (CMOS) compatibility. It is …