Oxide-based resistive switching-based devices: fabrication, influence parameters and applications
In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …
memory (RRAM) has been considered an excellent scientific research interest in the areas …
Recent advances in synaptic nonvolatile memory devices and compensating architectural and algorithmic methods toward fully integrated neuromorphic chips
Nonvolatile memory (NVM)‐based neuromorphic computing has been attracting
considerable attention from academia and the industry. Although it is not completely …
considerable attention from academia and the industry. Although it is not completely …
Highly efficient back-end-of-line compatible flexible Si-based optical memristive crossbar array for edge neuromorphic physiological signal processing and bionic …
The emergence of the Internet-of-Things is anticipated to create a vast market for what are
known as smart edge devices, opening numerous opportunities across countless domains …
known as smart edge devices, opening numerous opportunities across countless domains …
Demonstration of electronic and optical synaptic properties modulation of reactively sputtered zinc-oxide-based artificial synapses
A stable and highly controllable multistate analog memory system was developed using ZnO-
based memristors. Indium–tin oxide (ITO)/ZnO/ITO memristors exhibited electrical and …
based memristors. Indium–tin oxide (ITO)/ZnO/ITO memristors exhibited electrical and …
Long-term and short-term plasticity of Ta2O5/HfO2 memristor for hardware neuromorphic application
Here in, we introduce a Pt/Ta 2 O 5/HfO 2/TiN memristor with enhanced resistive switching
behavior, these conductive effects were induced by inserting a HfO 2 layer. We demonstrate …
behavior, these conductive effects were induced by inserting a HfO 2 layer. We demonstrate …
Oxygen Vacancy Transition in HfOx‐Based Flexible, Robust, and Synaptic Bi‐Layer Memristor for Neuromorphic and Wearable Applications
In this work, a reliable bilayer flexible memristor is demonstrated using TaOx/HfOx Bi‐layer
(BL) to mimic synaptic characteristics by using oxygen concentration engineering in the …
(BL) to mimic synaptic characteristics by using oxygen concentration engineering in the …
Improved synaptic performances with tungsten-doped indium-tin-oxide alloy electrode for tantalum oxide-based resistive random-access memory devices
A reliable oxide-based tungsten-doped indium-tin-oxide/tantalum oxide/titanium nitride (W-
ITO/TaOx/TiN) memristor with controllable memory states and synaptic properties for …
ITO/TaOx/TiN) memristor with controllable memory states and synaptic properties for …
ZnO-based hybrid nanocomposite for high-performance resistive switching devices: Way to smart electronic synapses
Neuromorphic computing systems inspired by the human brain emulate biological synapses
electronically for information handling and processing. Recently, memristive switching …
electronically for information handling and processing. Recently, memristive switching …
Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic system
J Park, H Ryu, S Kim - Scientific Reports, 2021 - nature.com
Ideal resistive switching in resistive random-access memory (RRAM) should be ensured for
synaptic devices in neuromorphic systems. We used an Ag/ZnO/TiN RRAM structure to …
synaptic devices in neuromorphic systems. We used an Ag/ZnO/TiN RRAM structure to …
Resistive switching and synaptic characteristics in ZnO/TaON-based RRAM for neuromorphic system
I Oh, J Pyo, S Kim - Nanomaterials, 2022 - mdpi.com
We fabricated an ITO/ZnO/TaON/TaN device as nonvolatile memory (NVM) with resistive
switching for complementary metal-oxide-semiconductor (CMOS) compatibility. It is …
switching for complementary metal-oxide-semiconductor (CMOS) compatibility. It is …