Dual metal gate dielectric engineered dopant segregated Schottky barrier MOSFET with reduction in Ambipolar current
S Kale, MS Chandu - Silicon, 2022 - Springer
In this paper, to solve the problem of higher ambipolar leakage current (I ambipolar) of
Dielectric Engineered (DE) Dopant Segregated (DG) Schottky Barrier (SB) MOSFET (DE DS …
Dielectric Engineered (DE) Dopant Segregated (DG) Schottky Barrier (SB) MOSFET (DE DS …
Analysis of the DC and RF performance of the Double-Gate-Source-Drain Schottky Barrier Tunnel Field Effect Transistor (DGSD-STFET) for high frequency …
P Anusuya, V Shalini, P Kumar - 2023 3rd International …, 2023 - ieeexplore.ieee.org
In this study, the performance of a Dual gate source drain schottky barrier tunnel field effect
transistor (DGSD-STFET) is analysed using a high k dielectric composed of HfO 2 and a low …
transistor (DGSD-STFET) is analysed using a high k dielectric composed of HfO 2 and a low …
[PDF][PDF] 1 School of Advanced Sciences, VIT-Chennai University, Tamil Nadu 600127, India, Email: anusuya. p2020@ vitstudent. ac. in 2 School of Electronics VIT …
P Anusuya, V Shalini, P Kumar - researchgate.net
In this study, the performance of a Dual gate source drain schottky barrier tunnel field effect
transistor (DGSD-STFET) is analysed using a high k dielectric composed of HfO2 and a low …
transistor (DGSD-STFET) is analysed using a high k dielectric composed of HfO2 and a low …